Semester | Fall Semester 2025 |
---|---|
Lecturers | C. W. Schneider and M. Trassin |
Periodicity | yearly course |
ECTS Points | 5 ECTS Points can be obtained |
Date 2025 | Topic | Lecturer |
---|---|---|
Sept. 16 | General Introduction | Trassin/Schneider |
Sept. 18 | Fundamentals I | C. W. Schneider |
Sept. 23 | Fundamentals II (Nucleation) | C. W. Schneider |
Sept. 25 | Fundamentals III (Epitaxy) | C. W. Schneider |
Sept. 30 | Growth mode & PVD - sputtering | M. Trassin |
Oct. 02 | RF sputtering; evap/MBE | M. Trassin |
Oct. 07 | PVD - PLD | Schneider/Yan |
Oct. 09 | CVD | C. W. Schneider |
Oct. 14 | Lab visit | Trassin/Yan |
Oct. 16 | Lab visit | Trassin/Yan |
Oct. 21 | Lab visit | Trassin/Yan |
Oct. 23 | Non-Vacuum technique | Schneider/Yan |
Oct. 28 | Non-Vac. technique (Sol Gel) / Struct. charact XRD | Schneider/Trassin |
Oct. 30 | RHEED, Ferroic I | M. Trassin |
Nov. 04 | Ferroic II | M. Trassin |
Nov. 06 | MF type I | M. Trassin |
Nov. 11 | TF characterization I | C. W. Schneider |
Nov. 13 | Probing FE II | M. Trassin |
Nov. 18 | MF II and probing FE I | M. Trassin |
Nov. 20 | TF characterization II | C. W. Schneider |
Nov. 25 | TF characterization III | C. W. Schneider |
Nov. 27 | TF characterization IV | C. W. Schneider |
Dec. 02 | TF characterization V | C. W. Schneider |
Dec. 04 | Microfabrication | C. W. Schneider |
Dec. 09 | Device concepts I | M. Trassin |
Dec. 11 | Device concepts II | M. Trassin |
Dec. 16 | Q&A | Trassin/Schneider |
Dec. 18 | written exam, Loc: tbd; Time: 9:45-11:30 | Trassin/Schneider/Yan |
Exam:
The written exam will be in English lasting 90 min. No accessories are allowed.
Planned are:
- Possible visit to PSI with a lab tour, including the large facilities (synchrotron-SLS)-on request