LMX: Laboratory for Multiscale materials eXperiments

Nanoscale thin films are widely implemented across a plethora of technological and scientific areas, and form the basis for many advancements that have driven human progress, owing to the high degree of functional tunability based on the chemical composition. Pulsed laser deposition is one of the multiple physical vapour deposition routes to fabricate thin films, employing laser energy to eject material from a target in the form of a plasma ...

In high-temperature cuprate superconductors, stripe order refers broadly to a coupled spin and charge modulation with a commensuration of eight and four lattice units, respectively. How this stripe order evolves across optimal doping remains a controversial question. Here we present a systematic resonant inelastic x-ray scattering study of weak charge correlations in La_2−xSr_xCuO₄ and La_1.8−xEu_0.2Sr_xCuO₄. Ultra high energy resolution experiments demonstrate the importance of the separation of inelastic and elastic scattering processes.

We studied the magnetic excitations in the quasi-one-dimensional (q-1D) ladder subsystem of Sr_14−xCa_xCu₂₄O₄₁ (SCCO) using Cu L₃-edge resonant inelastic X-ray scattering (RIXS). By comparing momentum-resolved RIXS spectra with high (x = 12.2) and without (x = 0) Ca content, we track the evolution of the magnetic excitations from collective two-triplon (2 T) excitations (x = 0) to weakly- dispersive gapped modes at an energy of 280 meV (x = 12.2)...

Magnetic topological phases of quantum matter are an emerging frontier in physics and materials science, of which kagome magnets appear as a highly promising platform. Here, we explore magnetic correlations in the recently identified topological kagome system TbMn₆Sn₆ using muon spin rotation, combined with local field analysis and neutron diffraction. Our studies identify an out-of-plane ferrimagnetic structure with slow magnetic fluctuations which exhibit a critical slowing down below T_^*C1 ≃ 120 K and finally freeze into static patches with ideal out-of-plane order below T_C1 ≃ 20 K....

Many in-memory computing frameworks demand electronic devices with specific switching characteristics to achieve the desired level of computational complexity. Existing memristive devices cannot be reconfigured to meet the diverse volatile and non-volatile switching requirements, and hence rely on tailored material designs specific to the targeted application, limiting their universality. “Reconfigurable memristors” that combine both ionic diffusive and drift mechanisms could address these limitations, but they remain elusive. Here we present a reconfigurable halide perovskite nanocrystal memristor that achieves on-demand switching between diffusive/volatile and drift/non-volatile modes by controllable electrochemical reactions.