Methods at the PSI User Facilities
The table below summarizes the various methods offered at the PSI user facilities. Please make use of the filter options to find the appropriate beamline and contact address for your scientific problem.
PSI Beamlines and Instruments
The Continuous Angle Multiple Energy Analysis (CAMEA) spectrometer is optimised for an efficient and detailed mapping of excitations under extreme conditions.
Surface diffraction is a unique tool for determining the detailed atomic structure of crystalline surfaces. Please find a selection of research highlights performed at this endstation.
Surface and Interface Spectroscopy - Low-Temperature High-Resolution Angle-Resolved Photoemission (ULTRA)
The Surface and Interface Spectroscopy beamline (SIS) provides a state-of-the-art experimental set-up to study the electronic and atomic structure of surfaces. The beamline has been designed for high photon energy resolution with low harmonic contamination and flexible light polarization. ULTRA endstation is designed for high-resolution angle-resolved photoemission spectroscopy (ARPES) at temperatures down to 4 K.
The X-Treme beamline is dedicated to x-ray magnetic (circular or linear) dichroism technique in the soft x-ray range. The technique is element selective and is used for example for the study of magnetic anisotropy and exchange coupling. The energy range covers the L2,3-edges (2p to 3d transition) of 3d transition metals and M4,5-edges of lanthanides (3d to 4f transition), in addition to the K-edges of light elements like O, N, F. Scientific areas of interest are: single molecule magnets, magnetic nanocrystals, self-assembly of nanomagnets on surfaces and strongly correlated electron systems.
The X-ray interference lithography facility at the Swiss Light Source (SLS) is a unique tool to obtain periodic nanostructures with periods as small as 25nm.The beamline provides spatially coherent beam in the Extreme Ultraviolet (EUV) energy range. Because of this the technique is also called Extreme-Ultraviolet Interference Lithography (EUV-IL).