Publications

  • Beckert A, Sigg H, Aeppli G
    Taking advantage of multiplet structure for lineshape analysis in Fourier space
    Optics Express. 2020; 28(17): 24937-24950. https://doi.org/10.1364/OE.395877
    DORA PSI
  • Choi J, Ivashko O, Blackburn E, Liang R, Bonn DA, Hardy WN, et al.
    Spatially inhomogeneous competition between superconductivity and the charge density wave in YBa2Cu3O6.67
    Nature Communications. 2020; 11: 990 (8 pp.). https://doi.org/10.1038/s41467-020-14536-1
    DORA PSI
  • Finizio S, Wintz S, Mayr S, Huxtable AJ, Langer M, Bailey J, et al.
    Current-induced dynamical tilting of chiral domain walls in curved microwires
    Applied Physics Letters. 2020; 116: 182404 (5 pp.). https://doi.org/10.1063/5.0005186
    DORA PSI
  • Grimm A, Frattini NE, Puri S, Mundhada SO, Touzard S, Mirrahimi M, et al.
    Stabilization and operation of a Kerr-cat qubit
    Nature. 2020; 584(7820): 205-209. https://doi.org/10.1038/s41586-020-2587-z
    DORA PSI
  • Nipoti R, Parisini A, Boldrini V, Vantaggio S, Gorni M, Canino M, et al.
    Ion implanted phosphorous for 4h-sic vdmosfets source regions: effect of the post implantation annealing time
    In: Yano H, Ohshima T, Eto K, Harada S, Mitani T, Tanaka Y, eds. Vol. 1004. Materials science forum. sine loco: Trans Tech Publications Ltd; 2020:698-704. https://doi.org/10.4028/www.scientific.net/MSF.1004.698
    DORA PSI
  • Armand Pilon FT, Lyasota A, Niquet Y-M, Reboud V, Calvo V, Pauc N, et al.
    Lasing in strained germanium microbridges
    Nature Communications. 2019; 10: 2724 (8 pp.). https://doi.org/10.1038/s41467-019-10655-6
    DORA PSI
  • Chick S, Matmon G, Murdin B, Naftaly M
    Metrology of complex refractive index for solids in the terahertz regime using frequency domain spectroscopy
    In: 2019 44th international conference on infrared, millimeter, and terahertz waves (IRMMW-THz). Danvers: IEEE; 2019:8873778 (3 pp.). https://doi.org/10.1109/IRMMW-THz.2019.8873778
    DORA PSI
  • Chretien J, Pauc N, Pilon FA, Bertrand M, Thai Q-M, Casiez L, et al.
    GeSn lasers with uniaxial tensile strain in the gain medium
    In: 2019 IEEE 16th international conference on group IV photonics (GFP). Danvers: IEEE; 2019:8926113 (2 pp.). https://doi.org/10.1109/GROUP4.2019.8926113
    DORA PSI
  • Chrétien J, Pauc N, Armand Pilon F, Bertrand M, Thai Q-M, Casiez L, et al.
    GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain
    ACS Photonics. 2019; 6(10): 2462-2469. https://doi.org/10.1021/acsphotonics.9b00712
    DORA PSI
  • Dutta D, De DS, Fan D, Roy S, Alfieri G, Camarda M, et al.
    Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET
    Applied Physics Letters. 2019; 115(10): 101601 (5 pp.). https://doi.org/10.1063/1.5112779
    DORA PSI
  • Förster J, Gräfe J, Bailey J, Finizio S, Träger N, Groß F, et al.
    Direct observation of coherent magnons with suboptical wavelengths in a single-crystalline ferrimagnetic insulator
    Physical Review B. 2019; 100(21): 214416 (7 pp.). https://doi.org/10.1103/PhysRevB.100.214416
    DORA PSI
  • Förster J, Wintz S, Bailey J, Finizio S, Josten E, Dubs C, et al.
    Nanoscale X-ray imaging of spin dynamics in yttrium iron garnet
    Journal of Applied Physics. 2019; 126(17): 173909 (11 pp.). https://doi.org/10.1063/1.5121013
    DORA PSI
  • Hales JE, Matmon G, Dalby PA, Ward JM, Aeppli G
    Virus lasers for biological detection
    Nature Communications. 2019; 10(1): 3594 (11 pp.). https://doi.org/10.1038/s41467-019-11604-z
    DORA PSI
  • Johnson BC, Woerle J, Haasmann D, Lew CT-K, Parker RA, Knowles H, et al.
    Optically active defects at the SiC/SiO2 interface
    Physical Review Applied. 2019; 12(4): 044024 (7 pp.). https://doi.org/10.1103/PhysRevApplied.12.044024
    DORA PSI
  • Messaoud JB, Michaud J-F, Certon D, Camarda M, Piluso N, Colin L, et al.
    Investigation of the Young's modulus and the residual stress of 4H-SiC circular membranes on 4H-SiC substrates
    Micromachines. 2019; 10(12): 801 (12 pp.). https://doi.org/10.3390/mi10120801
    DORA PSI
  • Nida S, Tsibizov A, Ziemann T, Woerle J, Moesch A, Schulze-Briese C, et al.
    Silicon carbide X-ray beam position monitors for synchrotron applications
    Journal of Synchrotron Radiation. 2019; 26(1): 28-35. https://doi.org/10.1107/S1600577518014248
    DORA PSI
  • Woerle J, Prokscha T, Hallén A, Grossner U
    Interaction of low-energy muons with defect profiles in proton-irradiated Si and 4H-SiC
    Physical Review B. 2019; 100(11): 115202 (7 pp.). https://doi.org/10.1103/PhysRevB.100.115202
    DORA PSI
  • Woerle J, Šimonka V, Müller E, Hössinger A, Sigg H, Selberherr S, et al.
    Surface morphology of 4H-SiC after thermal oxidation
    In: Gammon PM, Shah VA, McMahon RA, Jennings MR, Vavasour O, Padfield F, et al., eds. Vol. 963. Materials science forum. sine loco: Trans Tech Publications Ltd.; 2019:180-183. https://doi.org/10.4028/www.scientific.net/MSF.963.180
    DORA PSI
  • Woerle J, Johnson BC, Bongiorno C, Yamasue K, Ferro G, Dutta D, et al.
    Two-dimensional defect mapping of the SiO2/4H−SiC interface
    Physical Review Materials. 2019; 3(8): 084602 (8 pp.). https://doi.org/10.1103/PhysRevMaterials.3.084602
    DORA PSI
  • von den Driesch N, Stange D, Rainko D, Breuer U, Capellini G, Hartmann J-M, et al.
    Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters
    Solid State Electronics. 2019; 155: 139-143. https://doi.org/10.1016/j.sse.2019.03.013
    DORA PSI
  • Armand Pilon F, Pauc N, Widiez J, Reboud V, Calvo V, Hartmann JM, et al.
    Emerging optical gain in highly strained Germanium
    In: Advanced photonics 2018 (BGPP, IPR, NP, NOMA, sensors, networks, SPPCom, SOF). Vol. ITu4I. Integrated photonics research, silicon and nanophotonics. Washington D.C.: OSA - The Optical Society; 2018:ITu4I.3 (2 pp.). https://doi.org/10.1364/IPRSN.2018.ITu4I.3
    DORA PSI
  • Chaix L, Huang EW, Gerber S, Lu X, Jia C, Huang Y, et al.
    Resonant inelastic x-ray scattering studies of magnons and bimagnons in the lightly doped cuprate La2-xSrxCuO4
    Physical Review B. 2018; 97(15): 155144 (8 pp.). https://doi.org/10.1103/PhysRevB.97.155144
    DORA PSI
  • Choi J, Ivashko O, Dennler N, Aoki D, von Arx K, Gerber S, et al.
    Pressure-induced rotational symmetry breaking in URu2Si2
    Physical Review B. 2018; 98(24): 241113 (5 pp.). https://doi.org/10.1103/PhysRevB.98.241113
    DORA PSI
  • Matmon G, Ginossar E, Villis BJ, Kölker A, Lim T, Solanki H, et al.
    Two- to three-dimensional crossover in a dense electron liquid in silicon
    Physical Review B. 2018; 97: 155306 (8 pp.). https://doi.org/10.1103/PhysRevB.97.155306
    DORA PSI
  • Stange D, von den Driesch N, Zabel T, Armand-Pilon F, Rainko D, Marzban B, et al.
    GeSn/SiGeSn heterostructure and multi quantum well lasers
    ACS Photonics. 2018; 5(11): 4628-4636. https://doi.org/10.1021/acsphotonics.8b01116
    DORA PSI
  • Stange D, von den Driesch N, Rainko D, Zabel T, Marzban B, Ikonic Z, et al.
    Quantum confinement effects in GeSn/SiGeSn heterostructure lasers
    In: 2017 IEEE international electron devices meeting (IEDM). International electron devices meeting (IEDM). sine loco: IEEE; 2018:24.2.1-24.2.4. https://doi.org/10.1109/IEDM.2017.8268451
    DORA PSI
  • Tudisco S, La Via F, Agodi C, Altana C, Borghi G, Boscardin M, et al.
    SiCILIA—silicon carbide detectors for intense luminosity investigations and applications
    Sensors. 2018; 18(7): 2289 (16 pp.). https://doi.org/10.3390/s18072289
    DORA PSI
  • von den Driesch N, Stange D, Rainko D, Povstugar I, Zaumseil P, Capellini G, et al.
    Advanced GeSn/SiGeSn group IV heterostructure lasers
    Advanced Science. 2018; 5(6): 1700955 (7 pp.). https://doi.org/10.1002/advs.201700955
    DORA PSI
  • von den Driesch N, Stange D, Rainko D, Povstugar I, Breuer U, Ikonic Z, et al.
    Epitaxy of direct bandgap group IV Si-Ge-Sn alloys towards heterostructure light emitters
    In: Liu Q, Hartmann JM, Thean A, Miyazaki S, Ogura A, Gong X, et al., eds. SiGe, Ge, and related materials: materials, processing, and devices 8. Vol. 86. ECS transactions. sine loco: IOP Publishing; 2018:189-197. https://doi.org/10.1149/08607.0189ecst
    DORA PSI
  • Camarda M, Woerle J, Souliere V, Ferro G, Sigg H, Grossner U, et al.
    Analysis of 4H-SiC MOS capacitors on macro-stepped surfaces
    In: Zekentes K, Vasilevskiy KV, Frangis N, eds. Silicon carbide and related materials 2016. Vol. 897. Materials science forum. Durnten-Zurich, Switzerland: Trans Tech Publications; 2017:107-110. https://doi.org/10.4028/www.scientific.net/MSF.897.107
    DORA PSI
  • Fan D, Sigg H, Spolenak R, Ekinci Y
    Strain and thermal conductivity in ultrathin suspended silicon nanowires
    Physical Review B. 2017; 96(11): 115307. https://doi.org/10.1103/PhysRevB.96.115307
    DORA PSI
  • Gerber S, Yang S-L, Zhu D, Soifer H, Sobota JA, Rebec S, et al.
    Femtosecond electron-phonon lock-in by photoemission and x-ray free-electron laser
    Science. 2017; 357(6346): 71-75. https://doi.org/10.1126/science.aak9946
    DORA PSI
  • Haase J, Bagiante S, Sigg H, van Bokhoven JA
    Surface enhanced infrared absorption of chemisorbed carbon monoxide using plasmonic nanoantennas
    Optics Letters. 2017; 42(10): 1931-1934. https://doi.org/10.1364/OL.42.001931
    DORA PSI
  • Privitera SMS, Litrico G, Camarda M, Piluso N, La Via F
    Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements
    Applied Physics Express. 2017; 10(3): 036601 (4 pp.). https://doi.org/10.7567/APEX.10.036601
    DORA PSI
  • Woerle J, Camarda M, Schneider CW, Sigg H, Grossner U, Gobrecht J
    Analysis of thin thermal oxides on (0001) sic epitaxial layers
    In: Zekentes K, Vasilevskiy KV, Frangis N, eds. Silicon carbide and related materials 2016. Vol. 897. Materials science forum. Switzerland: Trans Tech Publications; 2017:119-122. https://doi.org/10.4028/www.scientific.net/MSF.897.119
    DORA PSI
  • Woerle J, Bisti F, Husanu M-A, Strocov VN, Schneider CW, Sigg H, et al.
    Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES
    Applied Physics Letters. 2017; 110(13): 132101 (5 pp.). https://doi.org/10.1063/1.4979102
    DORA PSI
  • Zabel T, Geiger R, Marin E, Müller E, Diaz A, Bonzon C, et al.
    Top-down method to introduce ultra-high elastic strain
    Journal of Materials Research. 2017; 32(4): 726-736. https://doi.org/10.1557/jmr.2017.31
    DORA PSI
  • Gassenq A, Tardif S, Guilloy K, Osvaldo Dias G, Pauc N, Duchemin I, et al.
    Accurate strain measurements in highly strained Ge microbridges
    Applied Physics Letters. 2016; 108(24): 241902 (4 pp.). https://doi.org/10.1063/1.4953788
    DORA PSI
  • Hoffmann MC, Lee W-S, Dakovski GL, Turner JJ, Gerber SM, Bonn D, et al.
    Excitation of coherent oscillations in underdoped cuprate superconductors by intense THz pulses
    In: Rafailov MK, Mazur E, eds. Ultrafast bandgap photonics. Vol. 9835. Proceedings of SPIE. Bellingham, WA, USA: SPIE; 2016:98351M (8 pp.). https://doi.org/10.1117/12.2224993
    DORA PSI
  • Jang H, Lee W-S, Nojiri H, Matsuzawa S, Yasumura H, Nie L, et al.
    Ideal charge-density-wave order in the high-field state of superconducting YBCO
    Proceedings of the National Academy of Sciences of the United States of America PNAS. 2016; 113(51): 14645-14650. https://doi.org/10.1073/pnas.1612849113
    DORA PSI
  • Reboud V, Gassenq A, Guilloy K, Osvaldo Dias G, Escalante JM, Tardif S, et al.
    Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: Towards CMOS compatible Ge lasers
    In: Reed GT, Knights AP, eds. SILICON PHOTONICS XI. Vol. 9752. Proceedings of SPIE - the international society for optical engineering. SPIE; 2016:97520F. https://doi.org/10.1117/12.2212597
    DORA PSI
  • Savoini M, Grübel S, Bagiante S, Sigg H, Feurer T, Beaud P, et al.
    THz near-field enhancement by means of isolated dipolar antennas: the effect of finite sample size
    Optics Express. 2016; 24(5): 4552-4562. https://doi.org/10.1364/OE.24.004552
    DORA PSI
  • Soulière V, Carole D, Camarda M, Wörle J, Grossner U, Dezellus O, et al.
    4H-SiC(0001) surface faceting during interaction with liquid Si
    In: Saggio M, Roccaforte F, Giannazzo F, Crippa D, La Via F, Nipoti R, eds. Vol. 858. Materials Science Forum. Trans Tech Publications; 2016:163-166. https://doi.org/10.4028/www.scientific.net/MSF.858.163
    DORA PSI
  • Stange D, Wirths S, Geiger R, Schulte-Braucks C, Marzban B, von den Driesch N, et al.
    Optically pumped GeSn microdisk lasers on Si
    ACS Photonics. 2016; 3(7): 1279-1285. https://doi.org/10.1021/acsphotonics.6b00258
    DORA PSI

Simon Gerber

Laboratory for Micro-
and Nanotechnology
Paul Scherrer Institut
5232 Villigen PSI
Switzerland

Telephone:
+41 56 310 3965
Telefax:
+41 56 310 2646
E-mail: simon.gerber@psi.ch

SwissFEL

IR Beamline at SLS

Quantum Technologies Collaboration at PSI (QTC@PSI)

A nucleation point of PSI competences towards the quantum technology initiative