Skip to main content
  • Paul Scherrer Institut PSI
  • PSI Research, Labs & User Services

Digital User Office

  • Digital User Office
  • DE
  • EN
  • FR
Paul Scherrer Institut (PSI)
Suche
Paul Scherrer Institut (PSI)

Hauptnavigation

  • Research at PSIOpen mainmenu item
    • Research Initiatives
    • Research Integrity
    • Scientific Highlights
    • Scientific Events
    • Scientific Career
    • PSI-FELLOW
    • PSI Data Policy
  • Research Divisions and LabsOpen mainmenu item
    • Overview
    • Research with Neutrons and Muons
    • Photon Science
    • Energy and Environment
    • Nuclear Energy and Safety
    • Biology and Chemistry
    • Large Research Facilities
  • Facilities and InstrumentsOpen mainmenu item
    • Overview
    • Large Research Facilities
    • Facilities
    • PSI Facility Newsletter
  • PSI User ServicesOpen mainmenu item
    • User Office
    • Methods at the PSI User Facilities
    • Proposals for beam time
    • Proposal Deadlines
    • Data Analysis Service (PSD)
    • EU support programmes
  • DE
  • EN
  • FR

Digital User Office (mobile)

  • Digital User Office

You are here:

  1. PSI Home
  2. Labs & User Services
  3. PSD
  4. LMN
  5. Research Groups
  6. Advanced Lithography and Metrology
  7. EUV Interference Lithography

Secondary navigation

Laboratory for Micro and Nanotechnology

  • About LMN
    • Organisational Structure
  • Open Positions
  • People
  • Research Groups Expanded submenu item
    • Nanotechnology
    • X-ray Optics and Applications
      • X-ray Optics for Imaging and Spectroscopy
        • Fresnel Zone Plate for X-ray Microscopy
        • Blazed X-ray Optics
        • Zernike X-ray Phase Contrast Microscopy
        • Fresnel Zone Plates for RIXS
        • Refractive Lenses by 2 Photon 3D Lithography
      • Wavefront Metrology and Manipulation
        • Vortex Fresnel Zone Plates
        • Grating-based Wavefront Metrology
      • X-ray Optics for XFELs
        • Diamond Fresnel Zone Plates
        • Beam Splitter Gratings for Spectral Monitoring
        • A Delay Line for Ultrafast Pump-Probe Experiments
        • X-ray Streaking for Ultrafast Processes
    • Polymer Nanotechnology
      • Nanoimprint Lithography
      • Three Dimensional Structures
    • Molecular Nanoscience
      • On-surface Chemistry
      • Spins in Molecular Monolayers
      • SiC: Surfaces and Interfaces
      • Our Research Team
    • Advanced Lithography and Metrology Expanded submenu item
      • EUV Interference Lithography
      • EUV Lensless Imaging
      • ALM Nanoscience
    • Quantum Technologies
      • News and highlights
      • People
      • Open positions
      • Current projects
        • 2D semiconductor devices
        • CDW-based memory devices
        • Imaging quantum many-body states
        • Nonlinear magnonics
        • Rare-earth quantum magnets
        • Strained Germanium laser
      • Techniques
        • Cristallina-Q
        • IR beamline
        • Nano-fabrication
      • Publications
      • QTC@PSI
  • Facilities and Equipment
    • Cleanroom Labs
    • Surface Science Lab
    • Scanning Electron Microscopy
    • Scanning Probe Microscopy
    • PEARL Beamline
    • XIL Facility at the SLS
    • Nanoimprint Facilities
    • Electron Beam Lithography
  • LMN News
  • LMN Highlights
    • Archive
  • Publications
    • Publications 2011 - 2016

EUV Interference Lithography


    • EUV-IL is a powerful and cost-effective tool for resist evaluation for future technology nodes in semiconductor manufacturing
    • Providing nanostructures for various projects and applications in nanoscience with high resolution and large area
    • Proven the world record resolution capabilities by showing a large-area patterns down to 6 nm half-pitch
Progress in nanotechnology is essential for producing faster computers and high-density data storage. This progress is fueled by the downscaling of integrated circuit (IC) technology, which was predicted decades ago by Gordon Moore. Currently high-volume semiconductor manufacturing uses the optical double patterning methods and immersion lithography at the wavelength of 193 nm to reach the 22 nm node but these techniques may reach their limits because of fundamental limitations. Therefore, particular interest is channeled towards extreme ultraviolet (EUV) lithography at the wavelength of 13.5 nm, whereas its cost-effective introduction requires further development of resists capable of printing dense patterns down to this resolution in addition to other challenges such as development of powerful light sources.

In parallel with the projection optical systems developed for industrial applications, EUV interference lithography (EUV-IL) is a powerful tools for both scientific and industrial research. Our industrial research focuses mainly of developing novel high-resolution resists. In addition, the advantage of being a parallel fabrication process with both high resolution and throughput makes EUV-IL attractive for academic research.

For image forming EUV-IL requires spatially coherent illumination and transmission diffraction gratings. EUV-IL tool at PSI is the world-leading tool reaching a resolution down to 6 nm half-pitch.
High-resolution Patterning
    • Stable light source: Synchrotron undulator
    • Spatial coherent illumination
    • Variable wavelength: 16 nm to 3 nm
    • Diffractive transmission gratings on SiN membranes
    • Interference pattern printed in resist
    • Stable interferometer
    • No depth of focus
    • Excellent reproducibility
    • On-site processing in cleanroom
    • Well-defined aerial image
    • High resolution
    • High throughput
Applications:
    • EUV resist development
    • Nanoimprint stamps
    • Fluidic confinement structures
    • Plasmonics and Metamaterials
    • Polymer grafting
    • Biomaterials
    • Catalysis
    • Templated assembly
    • Cell growth templates
    • Nanomagnetism
    • Fresnel Zone Plates
    • etc.

Selected Publications

Nanolithography using Bessel beams of extreme ultraviolet wavelength
D. Fan, L. Wang, and Y. Ekinci
Scientific Reports 6, 31301 (2016)

Photolithography reaches 6 nm half-pitch using extreme ultraviolet light
D. Fan and Y. Ekinci
J. Micro/Nanolith. MEMS MOEMS 15(3), 033505 (2016)

High-resolution and large-area nanoparticle arrays using EUV interference lithography
W. Karim, S. A. Tschupp, M. Oezaslan, T. Schmidt, J. Gobrecht, J. van Bokhoven, and Y. Ekinci
Nanoscale 7, 7386-7393 (2015)

Fabrication of quasiperiodic nanostructures with EUV interference lithography,
A. Langner, B. Päivänranta, B. Terhalle, and Y. Ekinci,
Nanotechnology 23, 105303 (2012).

Sub-10 nm patterning using EUV interference lithography,
B. Päivänranta, A. Langner, E. Kirk, C. David, and Y. Ekinci,
Nanotechnology 22, 375302 (2011).

Sidebar

Contact

Dr. Yasin Ekinci

Laboratory for Micro-
and Nanotechnology
Paul Scherrer Institut
5232 Villigen PSI
Switzerland

Telephone:
+41 56 310 2824
Telefax:
+41 56 310 2646
E-mail:
yasin.ekinci@psi.ch

top

Footer

Paul Scherrer Institut

Forschungsstrasse 111
5232 Villigen PSI
Switzerland

Telephone: +41 56 310 21 11
Telefax: +41 56 310 21 99

How to find us
Contact

Visitor Centre psi forum
School Lab iLab (in German)
Center for Proton Therapy
PSI Education Centre
PSI Guest House
PSI Gastronomie (in German)

 

Service & Support

  • Phone Book
  • User Office
  • Accelerator Status
  • PSI Publications
  • Suppliers
  • E-Billing
  • Computing
  • Safety (in German)

Career

  • Working at PSI
  • Job Opportunities
  • Training and further education
  • Vocational Training (in German)
  • PSI Education Center

For the media

  • PSI in brief
  • Facts and Figures
  • Media corner
  • Media Releases
  • Social Media Newsroom

Follow us: Twitter (in English) LinkedIn Youtube Issuu RSS

Footer legal

  • Imprint
  • Terms and Conditions
  • Editors' login