Dr. Jiaguo Zhang
Scientist (Sensor specialist)
5232 Villigen PSI
Jiaguo Zhang studied physics in Liaoning University and then particle and nuclear physics in Peking University for his master's degree with a thesis on the cross section evaluation for (n,alpha) reactions induced by fast neutrons. On 2009, he was granted by the Marie Curie Fellowship (MC-PAD) for his PhD studies at the Institute of Experimental Physics, Hamburg University on the topic of X-ray radiation damage in silicon sensors and sensor development for the European X-ray Free Electron Laser (DESY-thesis-13-018). After receiving his doctorate in 2013, he worked at DESY on edgeless sensor development and the AGIPD detector as a post-doctoral researcher for 2 years and a half. Since 2016, he joined the photon science detector group at PSI and worked as a postdoc on the development of Gotthard-II detector as well as sensors for soft X-ray detection and then became a scientist.
For Gotthard-II, a high frame rate charge-integrating silicon microstrip detector for energy dispersive experiments at free-electron lasers (FELs) and synchrotron radiation sources, he takes the responsibility to characterize, debug the prototype Application Specific Integrated Circuits (ASICs) in each development phase and to explore calibration procedures for final detectors during commissioning. In collaboration with sensor foundries, he develops sensors with thin entrance windows and internal gain compatible with the readout ASICs developed by the detector group of PSI for soft X-ray detection with improved performance.
Jiaguo Zhang's research work is focused on the development of hybrid silicon microstrip and pixel detectors for FEL and synchrotron applications and new technologies to overcome the limitations of sensors currently employed by the hybrid X-ray detectors. The latter includes the optimization of a thin entrance window for soft X-ray detection with improved quantum efficiency and development of segmented low gain avalanche sensors with optimized signal-to-noise ratio and fill factor for X-ray photons with low energies. He is also interested in characterization, simulation and modeling of silicon sensors towards a better understanding of sensor performance and realization of optimized sensor designs.
For an extensive overview we kindly refer you to our publication repository: DORA
Koybasi O, Zhang J, Kok A, Summanwar A, Povoli M, Breivik L, et al.
Edgeless silicon sensors fabricated without support wafer
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2020; 953: 163176 (11 pp.). https://doi.org/10.1016/j.nima.2019.163176