Dr. Jiaguo Zhang

Jiaguo

Scientist

Paul Scherrer Institut
Forschungsstrasse 111
5232 Villigen PSI
Schweiz

Jiaguo Zhang studied physics at Liaoning University and then particle and nuclear physics at Peking University for his master's degree with a thesis on the cross section evaluation for (n,alpha) reactions induced by fast neutrons. In 2009, he was granted the Marie Curie Fellowship (MC-PAD) for his Ph.D. studies at the Institute of Experimental Physics, Hamburg University on the topic of X-ray radiation damage in silicon sensors and sensor development for the European X-ray Free Electron Laser (EuXFEL) (DESY-thesis-13-018). After receiving his doctorate in 2013, he worked at DESY on edgeless sensor development and the AGIPD detector as a post-doctoral researcher for 2 years and a half. Since early 2016, he joined the photon science detector group at PSI and worked as a postdoc on the development of the Gotthard-II detector for the EuXFEL as well as silicon sensors for soft X-ray detection and then became a scientist.  

For Gotthard-II, a high frame rate charge-integrating silicon microstrip detector for energy dispersive experiments at free-electron lasers (FELs) and synchrotron radiation sources, he takes the responsibility to characterize, debug the prototype Application Specific Integrated Circuits (ASICs) in each development phase and to explore calibration procedures for final detector systems during commissioning. In collaboration with sensor foundries, he develops silicon sensors with thin entrance windows and internal gain which are compatible with the readout ASICs developed by the photon science detector group of PSI for soft X-ray detection with improved performance.

Jiaguo Zhang's research work is focused on the development of hybrid X-ray detectors for FEL and synchrotron applications and new technologies to overcome the limitations of silicon sensors currently employed by the hybrid X-ray detectors. The former includes those radiation hard, high frame rate, charge-integrating silicon microstrip and pixel detectors. The latter involves the optimization of thin entrance window technology for soft X-ray detection with improved quantum efficiency and development of segmented low gain avalanche sensors with optimized signal-to-noise ratio and fill factor for X-ray photons with low energies. He is also interested in characterization, simulation and modeling of silicon sensors towards a better understanding of sensor performance and realization of optimized sensor designs.

For an extensive overview we kindly refer you to our publication repository: DORA

  • Zhang J, Andrä M, Barten R, Bergamaschi A, Brückner M, Chiriotti-Alvarez S, et al.
    Design and first tests of the Gotthard-II readout ASIC for the European X-ray free-electron laser
    Journal of Instrumentation. 2021; 16(4): P04015 (25 pp.). https://doi.org/10.1088/1748-0221/16/04/P04015
    DORA PSI
  • Andrä M, Zhang J, Bergamaschi A, Barten R, Borca C, Borghi G, et al.
    Development of low-energy X-ray detectors using LGAD sensors
    Journal of Synchrotron Radiation. 2019; 26: 1226-1237. https://doi.org/10.1107/S1600577519005393
    DORA PSI
  • Allahgholi A, Becker J, Delfs A, Dinapoli R, Goettlicher P, Greiffenberg D, et al.
    The adaptive gain integrating pixel detector at the European XFEL
    Journal of Synchrotron Radiation. 2019; 26(1): 74-82. https://doi.org/10.1107/S1600577518016077
    DORA PSI
  • Wiedorn MO, Oberthür D, Bean R, Schubert R, Werner N, Abbey B, et al.
    Megahertz serial crystallography
    Nature Communications. 2018; 9(1): 4025 (11 pp.). https://doi.org/10.1038/s41467-018-06156-7
    DORA PSI
  • Zhang J, Andrä M, Barten R, Bergamaschi A, Brückner M, Dinapoli R, et al.
    Towards Gotthard-II: development of a silicon microstrip detector for the European X-ray Free-Electron Laser
    Journal of Instrumentation. 2018; 13(1): P01025 (22 pp.). https://doi.org/10.1088/1748-0221/13/01/P01025
    DORA PSI