Picosecond electrical switching, high-acceleration compatibility, and relativistic acceleration of field emission beam

Using single-gate field emitter arrays, we were able to demonstrate the stable field emission operation of our devices with the high acceleration electric field up to 30 MV/m [1] and acceleration to the relativistic energies (up to 5 MeV) [2]. These works were done by installing our FEAs into the combined diode-RF cavity accelerator of the SwissFEL gun test facility.
Combined diode-RF cavity accelerator of SwissFEL gun teststand facility
Combined diode-RF cavity accelerator of SwissFEL gun teststand facility
Integration of FEAs in the diode-RF cavity gun and acceleration of the e-beam to relativistic energies
Integration of FEAs in the diode-RF cavity gun and acceleration of the e-beam to relativistic energies
Picosecond electrical switching of FEA beam
Picosecond electrical switching of FEA beam
[1] S. Tsujino, M. Paraliev, E. Kirk, T. Vogel, F. Le Pimpec, C. Gough, S. Ivkovic, and H.-H. Braun, Nanosecond pulsed field emission from single-gate metallic field emitter arrays fabricated by molding, J. Vac. Sci. Technol. B29, 02B117 (2011).

[2] S. Tsujino, M. Paraliev, E. Kirk, C. Gough, S. Ivkovic, and H.-H. Braun, Sub-nanosecond switching and acceleration to relativistic energies of field emission electron bunches from metallic nano-tips, Phys. Plasmas 18, 064502 (2011); Selected for June 27, 2011 issue (Volume 23, Issue 25) of Virtual Journal of Nanoscale Science & Technology.

[3] S. Tsujino and M. Paraliev, Picosecond electrical switching of single-gate metal nanotip parrays, J. Vac. Sci. Technol. B 32, 02B103 (2014).

Dr. Soichiro Tsujino

Paul Scherrer Institut
5232 Villigen PSI
Switzerland

Telephone:
+41 56 310 2304
Telefax:
+41 56 310 2646
E-mail:
soichiro.tsujino@psi.ch

The 33th International Vacuum Nanoelectronics Conference (IVNC 2020) in Virtual, 6-8, July 2020;