Each beamline at SLS is optimised for a specific technique. Actually 16 beamlines are in user operation. Depending on the type of radiation source, there are two types of beamlines (insertion-device and bending-magnet). In the layout they are indicated as open boxes and black dots, respectively.
Find the appropriate instrument/technique to tackle your research field by searching in the beamline finder table below and read more about the specification of the instrument(s) on the corresponding beamline website(s).
|Long||Short||Full name||Insertion Device|
Surface diffraction is a unique tool for determining the detailed atomic structure of crystalline surfaces. Please find a selection of research highlights performed at this endstation.
Surface and Interface Spectroscopy - Low-Temperature High-Resolution Angle-Resolved Photoemission (ULTRA)
The Surface and Interface Spectroscopy beamline (SIS) provides a state-of-the-art experimental set-up to study the electronic and atomic structure of surfaces. The beamline has been designed for high photon energy resolution with low harmonic contamination and flexible light polarization. ULTRA endstation is designed for high-resolution angle-resolved photoemission spectroscopy (ARPES) at temperatures down to 4 K.
The X-Treme beamline is dedicated to x-ray magnetic (circular or linear) dichroism technique in the soft x-ray range. The technique is element selective and is used for example for the study of magnetic anisotropy and exchange coupling. The energy range covers the L2,3-edges (2p to 3d transition) of 3d transition metals and M4,5-edges of lanthanides (3d to 4f transition), in addition to the K-edges of light elements like O, N, F. Scientific areas of interest are: single molecule magnets, magnetic nanocrystals, self-assembly of nanomagnets on surfaces and strongly correlated electron systems.
The X-ray interference lithography facility at the Swiss Light Source (SLS) is a unique tool to obtain periodic nanostructures with periods as small as 25nm.The beamline provides spatially coherent beam in the Extreme Ultraviolet (EUV) energy range. Because of this the technique is also called Extreme-Ultraviolet Interference Lithography (EUV-IL).
1) Insertion Device
The highest brightness at a beamline can be reached by means of insertion devices ( Undulators, marked with U and Wigglers, marked with W). The number behind the letter for the device is the period length in mm. The letter E in the name of an undulator means
elliptical polarization is possible.
2) Bending magnet beamlines
This type of beamline uses the radiation which is coming from the central bending magnet of a triple bend achromat. 8 of those 12 central bends are equipped with 2 exit ports each (type A from the middle and type B from the entrance of a bend). The maximum potential for such beamlines is thus 2 * 8 = 16 bending magnet beamlines.