
Dr. Dimitrios Kazazis
Project Coordinator/Research ScientistPaul Scherrer Institut
Laboratory for Micro- and Nanotechnology
ODRA/119
5232 Villigen PSI
Switzerland
Telephone: +41 56 310 5578
E-mail: dimitrios.kazazis@psi.ch

Current Research
- Advanced nanofabrication techniques
- EUV interference lithography and electron beam lithography
- NFFA-Europe project coordination
Expertise
- Nanofabrication, nanocharacterization, nanotechnology
- Semiconductor physics, solid state electronics
- Graphene, GeOI, field effect transistors (FETs) and tunneling FETs
- Quantum Hall effect, magnetotransport
CV
I was born and grew up in the island of Lesbos, in Greece. I studied Electrical and Computer Engineering at the National Technical University of Athens (NTUA), from which I graduated in 2001 (5-year program.) During my diploma thesis, I was a member of the Microelectgronic Circuit Design Group and worked on the characterization and modeling of the MOS transistor especially using the EKV MOSFET model. Then, after serving in the Hellenic Army (mandatory service) as a Sergeant in the mortar platoon, I moved to Providence, RI in the U.S.A., and joined the School of Engineering at Brown University, where I received a Sc.M. (2005) and a Ph.D. (2009) degree from. During my doctorate studies, I worked in Prof. A. Zaslavsky's group. My work was mainly on the fabrication and characterization of ultrathin germanium-on-insulator (GeOI) field-effect transistors (FETs) and tunneling FETs (TFETs). I also worked on the subthreshold MOSFET characterization and modeling for low-noise and low-power applications. In addition, I worked on nanowire devices, (Si, Ge and SiGe). During my doctorate studies, I had the chance to work also with III-V materials, particularly on resonant tunneling diodes and on photocatalysis on ultra-thin oxides. The title of my Ph.D. thesis is: "Ultrathin Ge/high-κ dielectric structures for end-of-roadmap devices and other applications." In the summers of 2006 and 2007 I joined IBM Research in Yorktown Heights, NY as a summer intern In 2006 I worked on the growth of ultrathin single-crystal Ge on monocrystalline La-Y oxides on Si by molecular beam epitaxy (MBE) and on transistor fabrication. In 2007 I focused on setting up an in-vacuo photocatalysis experiment on thin high-k oxides.Between 2009 and 2014 I was a postdoc and a researcher at the Laboratory for Photonics and Nanostructures at the National Center for Scientific Research (LPN-CNRS)in France, developing semiconductor nanostructures for electrical transport, thermodynamic measurements, and nanoelectromechanical and metrology applications (III-V and graphene). More specifically, I fabricated state-of-the art electrical resistance standards based on the quantum Hall effect (QHE) in graphene, which surpassed GaAs based standards and which can work at relaxed laboratory conditions, suitable for industrial applications. In this context, I nanofabricated and characterised various graphene devices either grown epitaxially on SiC or by CVD methods. Moreover, I developed a process for fabricating suspended two-dimensional electron gases (2DEGs) with almost unaffected density and mobility. The suspended 2DEGs have applications ranging from 2DEG specific heat measurements to nanomechanical applications. Beyond the aforementioned projects, during my years at LPN I worked on various other projects collaborating with several institutes in France and abroad.
Subsequently, I worked for a year in a joint position between LPN and the Paris Observatory (member of the Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres - LERMA) developing THz circuits based on Schottky diodes for space applications.
Since 2016 I have joined the Paul Scherrer Institute in Villigen, Switzerland, where I am a researcher and project coordinator. I am a member of the Laboratory of Micro- and Nanotechnology and the Advanced Lithography and Metrology Group with an interest in advanced nanofabrication and nanolithopgraphy techniques, including electron beam lithography and extreme UV interference lithography. I am also the PSI coordinator of the NFFA-Europe project.
During my years at Brown University I taught several classes as a teaching assistant (Introduction to Semiconductor and Semiconductor Electronics, Electricity and Magnetism, Analysis and Design of Electronic Circuits). In France, I was a part-time lecturer at Paris 7 University (Diderot), between 2013-2016, teaching undergraduate Physics.
Publications
- C. Popescu, D. Kazazis, A. McClelland, G. Dawson, J. Roth, W. Theis, Y. Ekinci, and A. P. G. Robinson
High-resolution EUV lithography using a multi-trigger resist
Proc. SPIE 10583, 105831L (2018)
- T. Manouras, D. Kazazis, E. Koufakis, Y. Ekinci, M. Vamvakaki, and P. Argitis
Ultra-sensitive EUV resists based on acid-catalyzed polymer backbone breaking
Proc. SPIE 10583, 105831R (2018)
- I. Mochi, P. Helfenstein, R. Rajendran, S. Fernandez, D. Kazazis, and Y. Ekinci
Through-pellicle inspection of EUV masks
Proc. SPIE 10583, 105831I (2018)
- S. Fernandez, I. Mochi, P. Helfenstein, R. Rajendran, D. Kazazis, and Y. Ekinci
A comparative study of EUV absorber materials using actinic lensless imaging of EUV photomasks
Proc. SPIE 10583, 105831H (2018)
- P. Helfenstein, I. Mochi, R. Rajendran, S. Fernandez, D. Kazazis, and Y. Ekinci
High-throughput defect inspection for arbitrarily shaped EUV absorber patterns
Proc. SPIE 10585, 1058509(2018)
- S. Castellanos, L. Wu, M. Baljozovic, G. Portale, D. Kazazis, M. Vockenhuber, Y. Ekinci, and T. Jung
Ti, Zr, and Hf-based molecular hybrid materials as EUV photoresists
Proc. SPIE 10583, 105830A (2018)
- S. Gottlieb, D. Kazazis, I. Mochi, L. Evangelio, M. Fernández-Regúlez, Y. Ekinci, and F. Perez-Murano
High-accuracy topographical guiding patterns by EUV-IL for the study of nanoconfinement in the directed self-assembly of block copolymers
Submitted to Nanoscale (2018)
- J. Schluck, M. Hund, T. Heckenthaler, T. Heinzel, N. H. Siboni, J. Horback, K. Pierz, H. W. Schumacher, D. Kazazis, U. Gennser, and D. Mailly
Linear negative magnetoresistance in two-dimensional Lorentz gases
Phys. Rev. B 97, 115301 (2018)
- J. Schluck, T. Heinzel, J. Feilhauer, K. Pierz, H. W. Schumacher, D. Kazazis, and U. Gennser
Quantum signatures of competing transport mechanisms in lateral antidote superlattices
Submitted to Phys. Rev. B, (2017)
- N. H. Siboni, J. Schluck, K. Pierz, H. W. Schumacher, D. Kazazis, J. Horbach, T. Heinzel
Nonmonotonic classical magnetoconductivity of a two-dimensional electron gas in a disordered array of obstacles
Phys. Rev. Lett. 120, 056601 (2018)
- R. Fallica, D. Kazazis, I. Mocchi, H. Schift, Y. Ekinci, R. Kirchner, and A. Voigt
Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography
J. Vac. Sci. Technol. B 35, 061603 (2017)
- A. Nachawaty, M. Yang, W. Desrat, S. Nanot, B. Jabakhanji, D. Kazazis, R. Yakimova, A. Cresti, W. Escoffier, and B. Jouault
Magnetic field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point
Phys. Rev. B 96,075442 (2017)
- J. Haitjema, Y. Zhang, M. Vockenhuber, D. Kazazis, Y. Ekinci, A. M. Brouwer
Extreme ultraviolet patterning of tin-oxo cages
J. Micro/Nanolith. MEMS MOEMS 16, 033510 (2017)
- I. Mochi, P. Helfenstein, I. Mohacsi, R. Rajeev, D. Kazazis, S. Yoshitake, and Y. Ekinci
RESCAN: An actinic lensless microscope for defect inspection of EUV reticles
J. Micro/Nanolith. MEMS MOEMS 16, 041003 (2017)
- J. Haitjema, Y. Zhang, M. Vockenhuber, D. Kazazis, Y. Ekinci, A. M. Brouwer
Extreme ultraviolet patterning of tin-oxo cages
Proc. SPIE 10143, 1014325 (2017)
- K. Papatryfonos, D. Saladukha, K. Merghem, S. Joshi, F. Lelarge, S. Bouchoule, D. Kazazis, S. Guilet, L. Le Gratiet, T. J. Ochalski, G. Huyet, A. Martinez, and A. Ramdane
Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings
J. Appl. Phys. 121, 053101 (2017)
- M. Yang, O. Couturaud, W. Desrat, C. Consejo, D. Kazazis, R. Yakimova, M. Syväjärvi, M. Goiran, J. Béard, P. Frings, M. Pierre, A. Cresti, W. Escoffier, and B. Jouault
Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect
Phys. Rev. Lett. 117, 237702 (2016)
- J. Brun-Picard, R. Ribeiro-Palau, F. Lafont, D. Kazazis, A. Michon, F. Cheynis, O. Couturaud, C. Consejo, B. Jouault, W. Poirier, and F. Schopfer
Convenient graphene-based quantum Hall resistance standards
2016 Conference on Precision Electromagnetic Measurements (CPEM 2016), pp. 1-2 (2016)
- B. A. Piot, W. Desrat, D. K. Maude, D. Kazazis, A. Cavanna, and U. Gennser
Disorder-induced stabilization of the quantum Hall ferromagnet
Phys. Rev. Lett. 116, 106801 (2016)
- R. Ribeiro-Palau, F. Lafont, J. Brun-Picard, D. Kazazis, A. Michon, F. Cheynis, O. Couturaud, C. Consejo, B. Jouault, W. Poirier, and F. Schopfer
Quantum Hall resistance standard in graphene devices under relaxed experimental conditions
Nature Nanotechnol. 10, 965–971 (2015)
- J. Schluck, S. Fasbender, T. Heinzel, K. Pierz, H. Schumacher, D. Kazazis and U. Gennser
Snake orbit commensurability resonances in magneto-electric lateral superlattices
Phys. Rev.B 91, 195303 (2015)
- F. Lafont, R. Ribeiro-Palau, D. Kazazis, A. Michon, O. Couturaud, C. Consejo, T. Chassagne, M. Zielinski, M. Portail, B. Jouault, F. Schopfer, and W. Poirier
Quantum Hall resistance standard based on graphene grown by chemical vapor deposition on silicon carbide
Nature Commun. 6, 6806 (2015)
- B. Jabakhanji, D. Kazazis, W. Desrat, A. Michon, M. Portail, and B. Jouault
Magnetoresistance of disordered graphene: from low to high temperatures
Phys. Rev. B 90, 035423 (2014)
- B. Jabakhanji, A. Michon, C. Consejo, W. Desrat, M. Portail, A. Tiberj, M. Paillet, A. Zahab, F. Cheynis, F. Lafont, F. Schopfer, W. Poirier, F. Bertran, P. Le Fèvre, A. Taleb-Ibrahimi, D. Kazazis, W. Escoffier, B. C. Camargo, Y. Kopelevich, J. Camassel, and B. Jouault
Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing
Phys. Rev. B 89, 085422 (2014)
- E. Pallecchi, M. Ridene, D. Kazazis, F. Schopfer, W. Poirier, M. O. Goerbig, D, Mailly, and A. Ouerghi
Insulating to relativistic quantum Hall transition in disordered graphene
Sci. Rep. 3, 1791 (2013)
- D. Kazazis, E. Bourhis, J. Gierak, O. Bourgeois, T. Antoni, and U. Gennser
Suspended two-dimensional electron and hole gases
Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS 2012), AIP Conf. Proc. 1566, 249 (2013)
- E. Pallecchi, M. Ridene, D. Kazazis, C. Mathieu, F. Schopfer, W. Poirier, D, Mailly, and A. Ouerghi
Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
Appl. Phys. Lett. 100, 253109 (2012)
- D. Kazazis, B. Schuler, M. Granada, U. Gennser, G. Faini, M. Cerchez, and T. Heinzel
Sensing domain wall pinning in the longitudinal magnetoresistance of a two-dimensional electron gas
Superlattice Mistrost. 52, 11 (2012)
- W. Van Den Daele, S. Cristoloveanu, E. Augendre, C. Le Royer, J.-F. Damlencourt, D. Kazazis, and A. Zaslavsky
GeOI as a Platform for Ultimate Devices
in Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy, edited by S. Luryi, J. Xu, and A. Zaslavsky, John Wiley and Sons, Inc., Hoboken, New Jersey (2010)
- F. C. Sabou, D. Kazazis, R. I. Bahar, J. Mundy, W. Patterson, and A. Zaslavsky
Markov Chain Analysis of Thermally-Induced Soft Errors in Nanoscale CMOS Circuits
IEEE Trans. Dev. Mater. 9, 494 (2009)
- D. Kazazis, S. Guha, N. A. Bojarczuk, A. Zaslavsky, and H.-C. Kim
Substrate Fermi Level Effects in Photocatalysis on Oxides: Properties of Ultrathin TiO2/Si Films
Appl. Phys. Lett. 95, 064103 (2009)
- D. Kazazis, P. Jannaty, A. Zaslavsky, C. Le Royer, C. Tabone, L. Clevalier, and S. Cristoloveanu
Tunneling Field-Effect Transistor with Epitaxial Junction in Thin Germanium-on-Insulator
Appl. Phys. Lett. 94, 263508 (2009)
- D. Kazazis
Ultrathin Ge/High-κ Dielectric Structures for End-of-Roadmap Devices and Other Applications
Ph.D. Thesis, Brown University, Providence, RI, May 2009
- H. Li, J. Mundy, W. Patterson, D. Kazazis, A. Zaslavsky and R. I. Bahar
Thermally Induced Soft Errors in Nanoscale CMOS circuits
IEEE International Symposium on Nanoscale Architectures, (NANOSARCH 2007), pp. 62-69 (2007)
- D. Kazazis, A. Zaslavsky, E. Tutuc, N. A. Bojarczuk, and S. Guha
Negative Differential Resistance in Ultra-Thin Ge-On-Insulator FETs
Semicond. Sci. Technol. 22, S1 (2007)
- H. Li, J. Mundy, W. Patterson, D. Kazazis, A. Zaslavsky and R. I. Bahar
A Model for Soft Errors in the Subthreshold CMOS Inverter
The Second Workshop on System Effects of Logic Soft Errors (SELSE 2)(2006)
- E. J. Preisler, S. Guha, B. R. Perkins, D. Kazazis, A. Zaslavsky
Ultrathin Epitaxial Germanium on Crystalline Oxide Metal-Oxide-Semiconductor-Field-Effect Transistors
Appl. Phys. Lett. 86, 223504 (2005)
- D. M. Binkley, M. Bucher, and D. Kazazis
Modern analog CMOS design from weak through strong inversion
Proceedings of the European Conference on Circuit Theory and Design (ECCTD 2003), pp. I-8-I-13, (2003)
- M. Bucher, D. Kazazis, F. Krummenacher, D. Binkley, D. Foty, Y. Papananos
Analysis of Transconductances at All Levels of Inversion in Deep Submicron CMOS
9th IEEE Int. Conf. on Electronics, Circuits and Systems (ICECS 2002), pp. 1183-1186, (2002)
- M. Bucher, J.M. Sallese, F. Krummenacher, D. Kazazis, C. Lallement, W. Grabinski, C. Enz
EKV 3.0: An Analog Design-Oriented MOS Transistor Model
9th Int. Conf. on Mixed Design (MIXDES 2002), pp. 51-54 (2002)
- D. Kazazis
Characterization and Modeling of the MOS Transistor over the Continuum of Inversion Level and Channel Length
Diploma Thesis, National Technical University, Athens, Greece, July 2001