Paul Scherrer Institute


Dimitrios Kazazis.jpg

Dr. Dimitrios Kazazis

Project Coordinator/Research Scientist

Paul Scherrer Institut
Laboratory for Micro- and Nanotechnology
ODRA/119
5232 Villigen PSI
Switzerland

Telephone: +41 56 310 5578
E-mail: dimitrios.kazazis@psi.ch


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Current Research

  • Advanced nanofabrication techniques
  • EUV interference lithography and electron beam lithography
  • NFFA-Europe project coordination

Expertise

  • Nanofabrication, nanocharacterization, nanotechnology
  • Semiconductor physics, solid state electronics
  • Graphene, GeOI, field effect transistors (FETs) and tunneling FETs
  • Quantum Hall effect, magnetotransport

CV

I was born and grew up in the island of Lesbos, in Greece. I studied Electrical and Computer Engineering at the National Technical University of Athens (NTUA), from which I graduated in 2001 (5-year program.) During my diploma thesis, I was a member of the Microelectgronic Circuit Design Group and worked on the characterization and modeling of the MOS transistor especially using the EKV MOSFET model. Then, after serving in the Hellenic Army (mandatory service) as a Sergeant in the mortar platoon, I moved to Providence, RI in the U.S.A., and joined the School of Engineering at Brown University, where I received a Sc.M. (2005) and a Ph.D. (2009) degree from. During my doctorate studies, I worked in Prof. A. Zaslavsky's group. My work was mainly on the fabrication and characterization of ultrathin germanium-on-insulator (GeOI) field-effect transistors (FETs) and tunneling FETs (TFETs). I also worked on the subthreshold MOSFET characterization and modeling for low-noise and low-power applications. In addition, I worked on nanowire devices, (Si, Ge and SiGe). During my doctorate studies, I had the chance to work also with III-V materials, particularly on resonant tunneling diodes and on photocatalysis on ultra-thin oxides. The title of my Ph.D. thesis is: "Ultrathin Ge/high-κ dielectric structures for end-of-roadmap devices and other applications." In the summers of 2006 and 2007 I joined IBM Research in Yorktown Heights, NY as a summer intern In 2006 I worked on the growth of ultrathin single-crystal Ge on monocrystalline La-Y oxides on Si by molecular beam epitaxy (MBE) and on transistor fabrication. In 2007 I focused on setting up an in-vacuo photocatalysis experiment on thin high-k oxides.

Between 2009 and 2014 I was a postdoc and a researcher at the Laboratory for Photonics and Nanostructures at the National Center for Scientific Research (LPN-CNRS)in France, developing semiconductor nanostructures for electrical transport, thermodynamic measurements, and nanoelectromechanical and metrology applications (III-V and graphene). More specifically, I fabricated state-of-the art electrical resistance standards based on the quantum Hall effect (QHE) in graphene, which surpassed GaAs based standards and which can work at relaxed laboratory conditions, suitable for industrial applications. In this context, I nanofabricated and characterised various graphene devices either grown epitaxially on SiC or by CVD methods. Moreover, I developed a process for fabricating suspended two-dimensional electron gases (2DEGs) with almost unaffected density and mobility. The suspended 2DEGs have applications ranging from 2DEG specific heat measurements to nanomechanical applications. Beyond the aforementioned projects, during my years at LPN I worked on various other projects collaborating with several institutes in France and abroad.

Subsequently, I worked for a year in a joint position between LPN and the Paris Observatory (member of the Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres - LERMA) developing THz circuits based on Schottky diodes for space applications.

Since 2016 I have joined the Paul Scherrer Institute in Villigen, Switzerland, where I am a researcher and project coordinator. I am a member of the Laboratory of Micro- and Nanotechnology and the Advanced Lithography and Metrology Group with an interest in advanced nanofabrication and nanolithopgraphy techniques, including electron beam lithography and extreme UV interference lithography. I am also the PSI coordinator of the NFFA-Europe project.

During my years at Brown University I taught several classes as a teaching assistant (Introduction to Semiconductor and Semiconductor Electronics, Electricity and Magnetism, Analysis and Design of Electronic Circuits). In France, I was a part-time lecturer at Paris 7 University (Diderot), between 2013-2016, teaching undergraduate Physics.

Publications

  1. J. Haitjema, Y. Zhang, M. Vockenhuber, D. Kazazis, Y. Ekinci, A. M. Brouwer
    "Extreme ultraviolet patterning of tin-oxo cages”
    Submitted to J. Micro/Nanolith. MEMS MOEMS (2017)

  2. I. Mochi, P. Helfenstein, I. Mohacsi, R. Rajeev, D. Kazazis, S. Yoshitake, and Y. Ekinci
    "RESCAN: An actinic lensless microscope for defect inspection of EUV reticles"
    J. Micro/Nanolith. MEMS MOEMS 16, 041003 (2017)

  3. J. Haitjema, Y. Zhang, M. Vockenhuber, D. Kazazis, Y. Ekinci, A. M. Brouwer
    "Extreme ultraviolet patterning of tin-oxo cages”
    Proc. SPIE 10143, 1014325 (2017)

  4. M. Yang, O. Couturaud, W. Desrat, C. Consejo, D. Kazazis, R. Yakimova, M. Syväjärvi, M. Goiran, J. Béard, P. Frings, M. Pierre, A. Cresti, W. Escoffier, and B. Jouault
    "Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect"
    Phys.Rev. Lett. 117, 237702 (2016)

  5. J. Brun-Picard, R. Ribeiro-Palau, F. Lafont, D. Kazazis, A. Michon, F. Cheynis, O. Couturaud, C. Consejo, B. Jouault, W. Poirier, and F. Schopfer
    "Convenient graphene-based quantum Hall resistance standards"
    2016 Conference on Precision Electromagnetic Measurements (CPEM 2016), pp. 1-2 (2016)

  6. B. A. Piot, W. Desrat, D. K. Maude, D. Kazazis, A. Cavanna, and U. Gennser
    "Disorder-induced stabilization of the quantum Hall ferromagnet"
    Phys.Rev. Lett. 116, 106801 (2016)

  7. R. Ribeiro-Palau, F. Lafont, J. Brun-Picard, D. Kazazis, A. Michon, F. Cheynis, O. Couturaud, C. Consejo, B. Jouault, W. Poirier, and F. Schopfer
    "Quantum Hall resistance standard in graphene devices under relaxed experimental conditions"
    Nature Nanotechnol. 10, 965–971 (2015)

  8. J. Schluck, S. Fasbender, T. Heinzel, K. Pierz, H. Schumacher, D. Kazazis and U. Gennser
    "Snake orbit commensurability resonances in magneto-electric lateral superlattices"
    Phys.Rev.B 91, 195303 (2015)

  9. F. Lafont, R. Ribeiro-Palau, D. Kazazis, A. Michon, O. Couturaud, C. Consejo, T. Chassagne, M. Zielinski, M. Portail, B. Jouault, F. Schopfer, and W. Poirier
    "Quantum Hall resistance standard based on graphene grown by chemical vapor deposition on silicon carbide"
    Nature Commun. 6, 6806 (2015)

  10. B. Jabakhanji, D. Kazazis, W. Desrat, A. Michon, M. Portail, and B. Jouault
    "Magnetoresistance of disordered graphene: from low to high temperatures"
    Phys. Rev. B 90, 035423 (2014)

  11. B. Jabakhanji, A. Michon, C. Consejo, W. Desrat, M. Portail, A. Tiberj, M. Paillet, A. Zahab, F. Cheynis, F. Lafont, F. Schopfer, W. Poirier, F. Bertran, P. Le Fèvre, A. Taleb-Ibrahimi, D. Kazazis, W. Escoffier, B. C. Camargo, Y. Kopelevich, J. Camassel, and B. Jouault
    "Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing"
    Phys. Rev. B 89, 085422 (2014)

  12. E. Pallecchi, M. Ridene, D. Kazazis, F. Schopfer, W. Poirier, M. O. Goerbig, D, Mailly, and A. Ouerghi
    "Insulating to relativistic quantum Hall transition in disordered graphene"
    Sci. Rep. 3, 1791 (2013)

  13. D. Kazazis, E. Bourhis, J. Gierak, O. Bourgeois, T. Antoni, and U. Gennser
    "Suspended two-dimensional electron and hole gases"
    Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS 2012), AIP Conf. Proc. 1566, 249 (2013)

  14. E. Pallecchi, M. Ridene, D. Kazazis, C. Mathieu, F. Schopfer, W. Poirier, D, Mailly, and A. Ouerghi
    "Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption"
    Appl. Phys. Lett. 100, 253109 (2012)

  15. D. Kazazis, B. Schuler, M. Granada, U. Gennser, G. Faini, M. Cerchez, and T. Heinzel
    "Sensing domain wall pinning in the longitudinal magnetoresistance of a two-dimensional electron gas"
    Superlattice Mistrost. 52, 11 (2012)

  16. W. Van Den Daele, S. Cristoloveanu, E. Augendre, C. Le Royer, J.-F. Damlencourt, D. Kazazis, and A. Zaslavsky
    "GeOI as a Platform for Ultimate Devices"
    in Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy, edited by S. Luryi, J. Xu, and A. Zaslavsky, John Wiley and Sons, Inc., Hoboken, New Jersey (2010)

  17. F. C. Sabou, D. Kazazis, R. I. Bahar, J. Mundy, W. Patterson, and A. Zaslavsky
    "Markov Chain Analysis of Thermally-Induced Soft Errors in Nanoscale CMOS Circuits"
    IEEE Trans. Dev. Mater. 9, 494 (2009)

  18. D. Kazazis, S. Guha, N. A. Bojarczuk, A. Zaslavsky, and H.-C. Kim
    "Substrate Fermi Level Effects in Photocatalysis on Oxides: Properties of Ultrathin TiO2/Si Films"
    Appl. Phys. Lett. 95, 064103 (2009)

  19. D. Kazazis, P. Jannaty, A. Zaslavsky, C. Le Royer, C. Tabone, L. Clevalier, and S. Cristoloveanu
    "Tunneling Field-Effect Transistor with Epitaxial Junction in Thin Germanium-on-Insulator"
    Appl. Phys. Lett. 94, 263508 (2009)

  20. D. Kazazis
    "Ultrathin Ge/High-κ Dielectric Structures for End-of-Roadmap Devices and Other Applications"
    Ph.D. Thesis, Brown University, Providence, RI, May 2009

  21. H. Li, J. Mundy, W. Patterson, D. Kazazis, A. Zaslavsky and R. I. Bahar
    "Thermally Induced Soft Errors in Nanoscale CMOS circuits"
    IEEE International Symposium on Nanoscale Architectures, (NANOSARCH 2007), pp. 62-69 (2007)

  22. D. Kazazis, A. Zaslavsky, E. Tutuc, N. A. Bojarczuk, and S. Guha
    "Negative Differential Resistance in Ultra-Thin Ge-On-Insulator FETs"
    Semicond. Sci. Technol. 22, S1 (2007)

  23. H. Li, J. Mundy, W. Patterson, D. Kazazis, A. Zaslavsky and R. I. Bahar
    "A Model for Soft Errors in the Subthreshold CMOS Inverter"
    The Second Workshop on System Effects of Logic Soft Errors (SELSE 2)(2006)

  24. E. J. Preisler, S. Guha, B. R. Perkins, D. Kazazis, A. Zaslavsky
    "Ultrathin Epitaxial Germanium on Crystalline Oxide Metal-Oxide-Semiconductor-Field-Effect Transistors"
    Appl. Phys. Lett. 86, 223504 (2005)

  25. D. M. Binkley, M. Bucher, and D. Kazazis
    "Modern analog CMOS design from weak through strong inversion"
    Proceedings of the European Conference on Circuit Theory and Design (ECCTD 2003), pp. I-8-I-13, (2003)

  26. M. Bucher, D. Kazazis, F. Krummenacher, D. Binkley, D. Foty, Y. Papananos
    "Analysis of Transconductances at All Levels of Inversion in Deep Submicron CMOS"
    9th IEEE Int. Conf. on Electronics, Circuits and Systems (ICECS 2002), pp. 1183-1186, (2002)

  27. M. Bucher, J.M. Sallese, F. Krummenacher, D. Kazazis, C. Lallement, W. Grabinski, C. Enz
    "EKV 3.0: An Analog Design-Oriented MOS Transistor Model"
    9th Int. Conf. on Mixed Design (MIXDES 2002), pp. 51-54 (2002)

  28. D. Kazazis
    "Characterization and Modeling of the MOS Transistor over the Continuum of Inversion Level and Channel Length"
    Diploma Thesis, National Technical University, Athens, Greece, July 2001

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