The Thin Films and Interfaces Group
Thin films are nowadays utilized in many applications, ranging from semiconductor devices to optical coatings and are even present in pharmaceuticals (polymers). This wide-spread application of films with thicknesses from atomic monolayers to microns is due to the developments of thin film deposition techniques. Thin films are also important for studies of materials with new and unique properties due to the possibility of tuning their crystallographic and morphological properties. The thin film approach, i.e. the presence of interfaces (to a substrate or the film surface) adds more degrees of freedom for influencing the properties of materials, e.g. by lattice strain or surface functionalization. For these fundamental studies of material properties large research facilities such as synchrotron radiation or neutron spallation sources are one of the keys that the Paul Scherrer Institute (PSI) provides. Read more TopPhD projects at the Thin Films and Interfaces Group
At present, we do not have open PhD positions available. As soon as we have details will be posted at our open position page. Other open positions are always published on the PSI Open Positions page.News
Upcoming Conference
21st International Conference on Solid State Ionics, 2017
June 18-23, 2017Padua, Italy
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July 2017
3rd Functional Oxide Thin Films for Advanced Energy and Information Technology Conference, 2017
July 03-05, 2017 Rome, Italy
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Upcoming Group Seminars
TBASpeaker: W. Si
Date: Monday 19 June 2017 16:30
Room: OFLG/402
TBA
Speaker: V. Cervetto
Date: Monday 03 July 2017 16:30
Room: OFLG/402
TBA - show titel
Speaker: LMX Meeting: Peter Derlet
Date: Tuesday 04 July 2017 9:30
Room: ODRA/111
Thomas Lippert new Editor-in-Chief of Applied Physics A
Prof. Dr. Thomas Lippert has been appointed as new "Editor in Chief" of the journal Applied Physics A. He succeeds Michael Stuke who served Applied Physics A more than 20 years as an Editor in Chief.Top
Most recent Paper
Elisa Gilardi, Emiliana Fabbri, Lei Bi, Jennifer L. M. Rupp, Thomas Lippert, Daniele Pergolesi, and Enrico TraversaEffect of Dopant−Host Ionic Radii Mismatch on Acceptor-Doped Barium Zirconate Microstructure and Proton Conductivity
J. Phys. Chem. C 121, 9739-9747 (2017)
Effect of Dopant−Host Ionic Radii Mismatch on Acceptor-Doped Barium Zirconate Microstructure and Proton Conductivity
Abstract:In the present study, morphological and electrical properties of BaZrO3 were investigated as a function of the ionic radii mismatch between Zr and the different B-site dopants (Al, Sc, In, Lu, Tm, Y, Gd, Sm, Nd, and La) for the same solute concentration and valence. Our study highlights the critical role of the ionic radius of the acceptor dopant on stability, sinterability, and proton conductivity of barium zirconate. From our study, Gd-doped barium zirconate emerges as a novel promising material for proton conductor electrolytes.
Keywords: BaZrO3; acceptor doping; proton conductivity;
Facility: Thin Films and Interfaces, LMX, ENE, ETHZ
Reference: E. Gilardi et al., J. Phys. Chem. C 121, 9739-9747 (2017)
Read full article: here
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Facility: Thin Films and Interfaces, LMX, ENE, ETHZ
Reference: E. Gilardi et al., J. Phys. Chem. C 121, 9739-9747 (2017)
Read full article: here