Massimo Camarda.jpg

Dr. Massimo Camarda

Scientist
Quantum Technologies Group

Paul Scherrer Institut
Laboratory for Micro- and Nanotechnology
ODRA/116
5232 Villigen PSI
Switzerland

Telephone: +41 56 310 3752
Mobile: +41 76 720 3375
E-mail: massimo.camarda@psi.ch



CV

Since 2015 Scientist
Laboratory for Micro & Nanotechnology, Paul Scherrer Institut
Since 2015 Academic Guest
Advanced Power Semiconductor Laboratory, ETH Zürich
2013-2014 Senior Post doctoral research scholar
National Research Council of Italy, Microelectronics and Microsystems Institute
2012 Scientist
Epitaxial Technology Center S.P.A., Italy
2006-2011 Post doctoral research scholar
National Research Council of Italy, Microelectronics and Microsystems Institute
2002-2006 PhD studies
Jointly between the University of Catania, Italy, and the Norwegian University of Science and Technology (NTNU), Trondheim, Norway
1997-2002 Undergraduate studies
Department of Physics, University of Catania, Italy

Research interest

Crystal epitaxial growth and device fabrication on wide band gap semiconductors. In particular, Monte Carlo kinetic (kMC) algorithms for the simulation of semiconductors crystal growths, density functional theory (DFT) algorithms to calculate electronic properties of defective crystals and finite element simulations (FES) to predict mechanical behaviours in micro devices (MEMS). Experimental characterization techniques include Transmission Electron Microscopy (TEM), Raman, Photoluminescence, Scanning Electron Microscopies (SEM), Atomic force microscopies (AFM, X-ray Diffractometers (XRD) and electrical measurements (I-V and C-V).

Publications

Principal publications below See all list on Google Scholar.

Silicon carbide X-ray beam position monitors for synchrotron applications
S. Nida, A. Tsibizov, T. Ziemann, J. Woerle, A. Moesch, C. Schulze-Briese, C. Pradervand, S. Tudisco, H. Sigg, O.Bunk, U. Grossner, M. Camarda
Journal of synchrotron radiation 26, 28 (2019); doi: 10.1107/S1600577518014248

SiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications
S. Tudisco, et al.
Sensors 18, 2289 (2018); doi: 10.3390/s18072289

Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES
J. Woerle, F. Bisti, M.-A. Husanu, V. N. Strocov, C. W. Schneider, H. Sigg, J. Gobrecht, U. Grossner, and M. Camarda
Appl. Phys. Lett. 110, 132101 (2017); doi: 10.1063/1.4979102

Mechanisms of growth and defect properties of epitaxial SiC
F. La Via, M. Camarda, and A. La Magna
Applied Physics Reviews 1, 031301 (2014); doi: 10.1063/1.4890974

Monte Carlo study of the hetero-polytypical growth of cubic on hexagonal silicon carbide polytypes
Massimo Camarda
Surface Science 606 (2012) 1263–1267

Structural and electronic characterization of (2,3_3) bar-shaped stacking fault in 4H-SiC epitaxial layers
Massimo Camarda, Andrea Canino, Antonino La Magna, Francesco La Via, G. Feng, T. Kimoto, M. Aoki, and H. Kawanowa
APPLIED PHYSICS LETTERS 98, 051915 (2011)

A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures
Massimo Camarda, Antonino La Magna, Francesco La Via
Journal of Computational Physics 227 (2007) 1075–1093