CV
| Since 2015 | Scientist Laboratory for Micro & Nanotechnology, Paul Scherrer Institut |
| Since 2015 | Academic Guest Advanced Power Semiconductor Laboratory, ETH Zürich |
| 2013-2014 | Senior Post doctoral research scholar National Research Council of Italy, Microelectronics and Microsystems Institute |
| 2012 | Scientist Epitaxial Technology Center S.P.A., Italy |
| 2006-2011 | Post doctoral research scholar National Research Council of Italy, Microelectronics and Microsystems Institute |
| 2002-2006 | PhD studies Jointly between the University of Catania, Italy, and the Norwegian University of Science and Technology (NTNU), Trondheim, Norway |
| 1997-2002 | Undergraduate studies Department of Physics, University of Catania, Italy |
Research interest
Crystal epitaxial growth and device fabrication on wide band gap semiconductors.
In particular, Monte Carlo kinetic (kMC) algorithms for the simulation of semiconductors crystal growths, density functional theory (DFT) algorithms to calculate electronic properties of defective crystals and finite element simulations (FES) to predict mechanical behaviours in micro devices (MEMS). Experimental characterization techniques include Transmission Electron Microscopy (TEM), Raman, Photoluminescence, Scanning Electron Microscopies (SEM), Atomic force microscopies (AFM, X-ray Diffractometers (XRD) and electrical measurements (I-V and C-V).
Publications
Principal publications below
See all list on Google Scholar.
Silicon carbide X-ray beam position monitors for synchrotron applications
S. Nida, A. Tsibizov, T. Ziemann, J. Woerle, A. Moesch, C. Schulze-Briese, C. Pradervand, S. Tudisco, H. Sigg, O.Bunk, U. Grossner, M. Camarda
Journal of synchrotron radiation 26, 28 (2019); doi: 10.1107/S1600577518014248
SiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications
S. Tudisco, et al.
Sensors 18, 2289 (2018); doi: 10.3390/s18072289
Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES
J. Woerle, F. Bisti, M.-A. Husanu, V. N. Strocov, C. W. Schneider, H. Sigg, J. Gobrecht, U. Grossner, and M. Camarda
Appl. Phys. Lett. 110, 132101 (2017); doi: 10.1063/1.4979102
Mechanisms of growth and defect properties of epitaxial SiC
F. La Via, M. Camarda, and A. La Magna
Applied Physics Reviews 1, 031301 (2014); doi: 10.1063/1.4890974
Monte Carlo study of the hetero-polytypical growth of cubic on hexagonal silicon carbide polytypes
Massimo Camarda
Surface Science 606 (2012) 1263–1267
Structural and electronic characterization of (2,3_3) bar-shaped stacking fault in 4H-SiC epitaxial layers
Massimo Camarda, Andrea Canino, Antonino La Magna, Francesco La Via, G. Feng, T. Kimoto, M. Aoki, and H. Kawanowa
APPLIED PHYSICS LETTERS 98, 051915 (2011)
A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures
Massimo Camarda, Antonino La Magna, Francesco La Via
Journal of Computational Physics 227 (2007) 1075–1093
Silicon carbide X-ray beam position monitors for synchrotron applications
S. Nida, A. Tsibizov, T. Ziemann, J. Woerle, A. Moesch, C. Schulze-Briese, C. Pradervand, S. Tudisco, H. Sigg, O.Bunk, U. Grossner, M. Camarda
Journal of synchrotron radiation 26, 28 (2019); doi: 10.1107/S1600577518014248
SiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications
S. Tudisco, et al.
Sensors 18, 2289 (2018); doi: 10.3390/s18072289
Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES
J. Woerle, F. Bisti, M.-A. Husanu, V. N. Strocov, C. W. Schneider, H. Sigg, J. Gobrecht, U. Grossner, and M. Camarda
Appl. Phys. Lett. 110, 132101 (2017); doi: 10.1063/1.4979102
Mechanisms of growth and defect properties of epitaxial SiC
F. La Via, M. Camarda, and A. La Magna
Applied Physics Reviews 1, 031301 (2014); doi: 10.1063/1.4890974
Monte Carlo study of the hetero-polytypical growth of cubic on hexagonal silicon carbide polytypes
Massimo Camarda
Surface Science 606 (2012) 1263–1267
Structural and electronic characterization of (2,3_3) bar-shaped stacking fault in 4H-SiC epitaxial layers
Massimo Camarda, Andrea Canino, Antonino La Magna, Francesco La Via, G. Feng, T. Kimoto, M. Aoki, and H. Kawanowa
APPLIED PHYSICS LETTERS 98, 051915 (2011)
A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures
Massimo Camarda, Antonino La Magna, Francesco La Via
Journal of Computational Physics 227 (2007) 1075–1093