Advanced Lithography and MetrologyThe main focus of the group is lithograhy and metrology methods in particular for semiconductor industry. One of the major activity is the operation and further development of extreme ultraviolet (EUV) interference lithography. This technique makes use of synchrotron-generated EUV light at 13.5 nm wavelength and holographic gratings for the fabrication of periodic and high-resolution nanostructures over large areas with high throughput. With a world record in resolution for photolithography down to 7 nm half pitch, the XIL-II beamline at Swiss Light Source is the world-leading tool and is used extensively used for both academic and industrial research as well as for commercial applications. EUV-IL provides a unique test center for photoresist testing for semiconductor manufacturers and helps in the development of next generation computer processors and memory chips. At the same time, this novel technology offers new opportunities for academic research by providing 1D and 2D periodic nanostructures for various projects, thanks to its high resolution, high throughput, and large area capabilities.
Moreover we develop lensless imaging and inspection methods at short wavelengths. A current project is the development of EUV mask inspection using coherent diffraction methods.
In addition, we work on various topics in nanoscience and technology, including nanophotonics, nanofluidics, and nanocatalysis. Our interest is fundemental understanding of nanoscale phenomena as well as exploring the potential applications.
For more information see also XIL-II beamline.
Current ResearchEUV Interference Lithography
• Characteristics of EUV-IL
• Science Based on EUV-IL structures
• EUV Actinic Mask Inspection