Spectroscopy of Novel Materials GroupThe Spectroscopy of Novel Materials group uses advanced spectroscopic techniques to study electronic structure, low-energy excitations and correlation effects in a broad range of complex material systems exhibiting surprising and useful properties. These include high-temperature superconductors, low-dimensional magnets, colossal magnetoresistors, topological insulators, oxide thin films, interfaces between oxide materials, and oxide heterostructures. We operate two beamlines with two endstations each.
The SIS beamline offers high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES with photon energies in the VUV to soft X-ray regime (20-800 eV). The ADRESS beamline operates in the soft X-ray range (300-1600 eV) and hosts resonant inelastic x-ray scattering (RIXS) and soft x-ray ARPES endstations. Additionally, part of our research makes use of a dedicated pulsed laser deposition (PLD) chamber for in situ studies of thin films, interfaces, and heterostructures. Collectively, these techniques give us the ability to probe surface and bulk properties of complex materials and to visualize the interplay of the electrons with spin, lattice, and orbital degrees of freedom.
The electronics industry expects a novel high-performance transistor made of gallium nitride to offer considerable advantages over present-day high-frequency transistors. Yet many fundamental properties of the material remain unknown. Now, for the first time, researchers at the Paul Scherrer Institute PSI have observed electrons while they were flowing in this promising transistor. For that they used one of the world's best sources of soft X-rays at PSI's Swiss Light Source SLS.