2D semiconductor devices

For solid-state quantum computing the ability to deterministically confine donors in a semiconductor is crucial, not only to create quantum bits defined by the electron or nuclear spin of a dopant, but also to fabricate control systems such as gates mediated by one-dimensional wires or two-dimensional “delta” (δ) layers.
In this project low dimensional devices are made by confining group V donors in Silicon. The devices are then investigated electrically by low temperature magnetoresistance measurements [1] and optically by using techniques such as Fourier transform infra-red (FTIR) spectroscopy and angle resolved photo-emission spectroscopy (ARPES). This allows to understand characteristics of the donor electrons in the Si crystal [2] such as interactions between dopant atoms, the spin-orbit and spin-spin coupling, the metal-insulator transition, and their dependence on dopant species. The goal is to reduce the dimensionality of the confinement to one and zero dimensions and to create ordered single-atom arrays, as well as to measure their quantum electro-optic properties [3]. 

[1] D. F. Sullivan, B. E. Kane, and P. E. Thompson. Appl. Phys. Lett. 85, 6362 (2004). 

[2] G. Matmon, E. Ginossar, B. J. Villis, A. Kolker, T. Lim, H. Solanki, S. R. Schofield, N. J. Curson, J. Li, B. N. Murdin, A. J. Fisher and G. Aeppli, Phys. Rev. B 97, 155306 (2018). 

[3] Chick, S. et al. Coherent superpositions of three states for phosphorous donors in silicon prepared using THz radiation. Nat. Commun. 8, 16038 (2017).