Thomas Zabel.jpg

Dr. Thomas Zabel

Scientist
Quantum Technologies Group

Paul Scherrer Institut
Laboratory for Micro- and Nanotechnology
ODRA/116
5232 Villigen PSI
Switzerland

Telephone: +41 56 310 2070
E-mail: thomas.zabel@psi.ch



CV

Since 2014 Postdoctoral researcher
Laboratory for Micro & Nanotechnology, Paul Scherrer Institut
2012-2014 Postdoctoral researcher
School of Information and Communication Technology, Kungliga Tekniska Högskoklan, Stockholm
2009-2012 PhD studies
Walter Schottky Institut, Technische Universität München
2003-2008 Undergraduate studies
Department of Physics, Technische Universität München

Research interest

Semiconductor physics and materials science. In particular, nanotechnology, light matter interaction, optical recombination in low dimensional systems and semiconductor device physics. Experimental expertise includes optical spectroscopy and cleanroom based nanofabrication.

Publications

See also profile on https://www.researchgate.net/profile/Thomas_Zabel/contributions. An asterisk (*) indicates equal contribution.

Germanium under High Tensile Stress: Nonlinear Dependence of Direct Band Gap vs Strain
K. Guilloy, N. Pauc, A. Gassenq, Y.-M. Niquet, J.-M. Escalante, I. Duchemin, S. Tardif, G. Osvaldo Dias, D. Rouchon, J. Widiez, J.-M. Hartmann, R. Geiger, T. Zabel, H. Sigg, J. Faist, A. Chelnokov, V. Reboud and V. Calvo
ACS Photonics, 2016, 3 (10), pp 1907–1911

Optically Pumped GeSn Microdisk Lasers on Si
D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca
ACS Photonics, 2016, 3 (7), pp 1279–1285.

Accurate strain measurements in highly strained Ge microbridges
A. Gassenq, S. Tardif, K. Guilloy, G. Osvaldo Dias, N. Pauc, I. Duchemin, D. Rouchon, J.-M. Hartmann, J. Widiez, J. Escalante, Y.-M. Niquet, R. Geiger, T. Zabel, H. Sigg, J. Faist, A. Chelnokov, F. Rieutord, V. Reboud and V. Calvo
Appl. Phys. Lett. 108, 241902 (2016)

Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering
S. Tardif, A. Gassenq, K. Guilloy, N. Pauc, G. Osvaldo Dias, J.-M. Hartmann, J. Widiez, T. Zabel, E. Marin, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, V. Calvo, J.-S. Micha, O. Robacha, and F. Rieutord
J. Appl. Cryst. 49, 1402-1411 (2016)

1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications
A. Gassenq, K. Guilloy, G. Osvaldo Dias, N. Pauc, D. Rouchon, J.-M. Hartmann, J. Widiez, S. Tardif, F. Rieutord, J. Escalante, I. Duchemin, Y.-M. Niquet, R. Geiger, T. Zabel, H. Sigg, J. Faist, A. Chelnokov, V. Reboud and V. Calvo
Appl. Phys. Lett. 107, 191904 (2015)

Group IV direct band gap photonics: methods, challenges, and opportunities
R. Geiger, T. Zabel and H. Sigg
Frontiers in Materials, 2 (2015)

AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers
Y. Xiang, C. Reuterskiöld-Hedlund, X. Yu, C. Yang, T. Zabel, M. Hammar, and M.N. Akram
Optics Express 23, 12 (2015)

Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers
Y. Xiang, C. Reuterskiöld-Hedlund, X. Yu, C. Yang, T. Zabel, M. Hammar, and M.N. Akram
IEEE Photonics Technology Letters 27, 7 (2015)

Auger recombination in In(Ga)Sb/InAs quantum dots
T. Zabel, C. Reuterskiöld Hedlund, O. Gustafsson, A. Karim, J. Berggren, Q. Wang, C. Ernerheim-Jokumsen, M. Soldemo, J. Weissenrieder, M. Götelid and M. Hammar
Appl. Phys. Lett. 106, 013103 (2015)

Laterally self-ordered silicon-germanium islands with optimized confinement properties
T. Zabel, N. Sircar, N. Hauke, J. Zweck, M. Döblinger, M. Kaniber, J. J. Finley, G. Abstreiter, Y. Arakawa and D. Bougeard
Appl. Phys. Lett. 103, 063105 (2013)

Minority current distribution in InGaAs/GaAs transistor-vertical-cavity surface-emitting laser
Y. Xiang, X. Yu, J. Berggren, T. Zabel, M. Hammar and M. N. Akram
Appl. Phys. Lett. 102, 191101 (2013)

A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands
N. Hauke, A. Tandaechanurat, T. Zabel, T. Reichert, H. Takagi, M. Kaniber, S. Iwamoto, D. Bougeard, J. J. Finley, G. Abstreiter and Y. Arakawa
New Journal of Physics, 14 (2012)

Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanocavities
N. Hauke, S. Lichtmannecker, T. Zabel, F. P. Laussy, A. Laucht, M. Kaniber, D. Bougeard, G. Abstreiter, J. J. Finley, and Y. Arakawa
Phys. Rev. B 84, 085320 (2011)

Enhanced photoluminescence emission from two-dimensional silicon photonic crystal nanocavities
N. Hauke, T. Zabel, K. Müller, M. Kaniber, A. Laucht, D. Bougeard, G. Abstreiter, J. J. Finley and Y. Arakawa
New Journal of Physics 12, (2010)

Photonic crystal nanostructures for optical biosensing applications
D. Dorfner, T. Zabel, T. Hürlimann, N. Hauke, L. Frandsen, U. Rant, G. Abstreiter, J. J. Finley
Biosensors and Bioelectronics 24 (2009) 3688–3692

Silicon photonic crystal nanostructures for refractive index sensing
D. Dorfner, T. Hürlimann, T. Zabel, L. Frandsen, G. Abstreiter, J. J. Finley
Appl. Phys. Lett. 93, 181103 (2008)