Silicon Carbide Based Electronics
Silicon carbide (SiC) is a wide-bandgap semiconductor considered to be one of the major enabling materials for advanced high power and high temperature electronics applications. In addition to its wide bandgap, SiC also has a high critical electric field strength and a high saturation drift velocity, can be doped both n- and p-type with relative ease, has SiO2 as native oxide. Up to six inch wafers with thickness and doping variations below 10%, are now commercially available. With recent improvements in crystal growth and material processing, SiC-based electronics is now superior for power conversion than state-of-the-art silicon-based electronics, especially for high-temperature, high-voltage and high-frequency applications.A significant part of our research is embedded in the “Swiss Transformer” project, funded by the Swiss National Science Foundation under the NRP 70 program.
In parallel, we are also investigating the tolerance of this wideband gap material to high fluence X-ray beams. Aim of this Research is to assess its potential for next generation X-ray beam position monitors and detectors to be used in Synchrotrons and XFELs.