Silicon Carbide Based Electronics

Silicon carbide (SiC) is a wide-bandgap semiconductor considered to be one of the major enabling materials for advanced high power and high temperature electronics applications. In addition to its wide bandgap, SiC also has a high critical electric field strength and a high saturation drift velocity, can be doped both n- and p-type with relative ease, has SiO2 as native oxide. Up to six inch wafers with thickness and doping variations below 10%, are now commercially available.
With recent improvements in crystal growth and material processing, SiC-based electronics is now superior for power conversion than state-of-the-art silicon-based electronics, especially for high-temperature, high-voltage and high-frequency applications. Furthermore, thanks to its mature growth and fabrication technology when compared to diamond, SiC finds also applications in radiation hard detectors and in sensing using color centers.

Below the links to the different activities: