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Judith Wörle

PhD student
Quantum Technologies Group

Paul Scherrer Institut
Laboratory for Micro- and Nanotechnology
5232 Villigen PSI

Telephone: +41 56 310 3574
E-mail: judith.woerle@psi.ch


Since 2015 PhD Studies
LMN, Paul Scherrer Institut, Switzerland
2014 Industrial Internship
Seagate Technologies, Londonderry, United Kingdom
2012-2014 MSc in Physics
Photonic’s group, University of Innsbruck, Austria
2012 Exchange Semester
Polytechnical University, St. Petersburg, Russia
2008-2012 BSc in Physics
University of Innsbruck, Austria

Research interest

Semiconductor physics with a focus on Silicon Carbide. Defect generation at the SiO2/SiC interface and its impact on power devices. Development and fabrication of switching devices, mainly SiC MOS capacitors and MOSFETs.


Silicon carbide X-ray beam position monitors for synchrotron applications
S. Nida, A. Tsibizov, T. Ziemann, J. Woerle, A. Moesch, C. Schulze-Briese, C. Pradervand, S. Tudisco, H. Sigg, O. Bunk, U. Grossner and M. Camarda
Journal of Synchrotron Radiation, Vol. 26, pp. 28-35 (2019)

Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES
J. Woerle, F. Bisti, M.-A. Husanu, V.N. Strocov, C.W. Schneider, H. Sigg, J. Gobrecht, U. Grossner, M. Camarda
Applied Physics Letters, Vol. 110 (2017).

Analysis of thin thermal oxides on (0001) SiC epitaxial layers
J. Woerle, M. Camarda, C.W. Schneider, H. Sigg, U. Grossner, J. Gobrecht
Materials Science Forum, Vol. 897, pp. 119-122 (2017).

Analysis of 4H-SiC MOS capacitors on macro-stepped surfaces
M. Camarda, J. Woerle, G. Ferro, H. Sigg, U. Grossner, J. Gobrecht
Materials Science Forum, Vol. 897, pp. 107-110 (2017).

4H-SiC(0001) surface faceting during interaction with liquid Si
V. Souliere, D. Carole, M. Camarda, J. Woerle, U. Grossner, O. Dezellus, G. Ferro
Materials Science Forum, Vol. 858, pp. 163-166 (2016).

Honors and awards

2016 Best Student Poster Award at the ECSCRM2016, Halkidiki, Greece