Hans Sigg1.jpg

Dr. Hans Sigg

Group Leader
Quantum Technologies Group

Paul Scherrer Institut
Laboratory for Micro- and Nanotechnology
5232 Villigen PSI

Telephone: +41 56 310 4048
E-mail: hans.sigg@psi.ch


Since June 2016 Group head
Quantum Technology
Since 1998 Staff scientist
Laboratory for Micro & Nanotechnology, Paul Scherrer Institut
2000-1997 Staff scientist
Solid State Physics group, Paul Scherrer Institut, Zürich
1985-1989 Post-Doc
MPI Festkörperforschung, Stuttgart, Germany
1990-1984 PhD studies
Katholiek Universiteit, Nijmegen, NL
1974-1979 Study of Physics
ETH Zürich

Research interest and projects

Condensed matter physics, spectroscopy and materials science. In particular, low dimensional semiconductors, Brillouin Scattering, Photon Drag, SiGe Quantum Cascade Laser, Pump and Probe Spectroscopy, Synchrotron Infrared, Plasmonics and THz Metamaterials, strained Ge laser.

Conference organisation & chair

“Intersubband Transition Quantum Well, ITQW” conference taking place in Evolène, CH in 2003.

Selected publications

h-index = 29 (incl. self citations) from 190 items; 2837 total citations (without self citations).
See also profile on ResearcherID.

Lasing in Direct-Bandgap GeSn Alloy Grown on Si
Stephan Wirths, Richard Geiger, N von den Driesch, G. Mussler, T Stoica, S Mantl, Z Ikonić et al.
Nature Photonics 9, 2 (2015)

Giant Electric Field Enhancement in Split Ring Resonators Featuring Nanometer-Sized Gaps
Salvatore Bagiante, Florian Enderli, J Fabiańska, Hans Sigg and Thomas Feurer
Scientific Reports 5 (2015)

Metal Double Layers with Sub-10 Nm Channels
Thomas Siegfried, Li Wang, Yasin Ekinci, Olivier J F Martin and Hans Sigg
ACS Nano 8, 4 (2014)

Analysis of Enhanced Light Emission From Highly Strained Germanium Microbridges
Martin J Süess, Richard Geiger, R A Minamisawa, G L Schiefler, J Frigerio, D Chrastina, G Isella, R Spolenak, Jerome Faist and Hans Sigg
Nature Photonics 7, 6 (2013)

Engineering Metal Adhesion Layers That Do Not Deteriorate Plasmon Resonances
Siegfried, Thomas, Yasin Ekinci, Olivier J F Martin and Hans Sigg
ACS Nano 7, 3, (2013)

Direct Observation of Charge Separation on Au Localized Surface Plasmon
Jacinto Sa, Giulia Tagliabue, Peter Friedli, Jakub Szlachetko, Hannelore Mercedes Rittmann-Frank, Fabio Santomauro, Christopher J Milne and Hans Sigg
Energy & Environmental Science (2013)

Four-Wave Mixing in a Quantum Cascade Laser Amplifier
Peter Friedli, Hans Sigg, Borislav Hinkov, Andreas Hugi, Sabine Riedi, Mattias Beck and Jérome Faist
Applied Physics Letters 102 (2013)

Synchrotron Infrared Transmission Spectroscopy of a Quantum Cascade Laser Correlated to Gain Models
Peter Friedli, Hans Sigg, Andreas Wittmann, Romain Terazzi, Mattias Beck, Andrzej Kolek and Jérome Faist
Applied Physics Letters 102 (2013)

Top-Down Fabricated Silicon Nanowires Under Tensile Elastic Strain Up to 4.5%
Renato Minamisawa, Martin J Süess, R Spolenak, J Faist, C David, J Gobrecht, K K Bourdelle and Hans Sigg
Nature Communications 3 (2012)

Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density of Photoexcited Carriers, Doping, and Strain.
Lee Carroll, Peter Friedli, Stefan Neuenschwander, Hans Sigg, Stefano Cecchi, Fabio Isa, Daniel Chrastina, Giovanni Isella, Yuriy Fedoryshyn and Jérôme Faist.
Physical Review Letters 109 (2012)

Ultra-Broadband Infrared Pump-Probe Spectroscopy Using Synchrotron Radiation and a Tuneable Pump.
Lee Carroll, Peter Friedli, Philippe Lerch, Jörg Schneider, Daniel Treyer, Stephan Hunziker, Stefan Stutz and Hans Sigg
Review of Scientific Instruments 82, 6 (2011)

Book Chapters and Reviews

Group IV Direct Band Gap Photonics: Methods, Challenges, and Opportunities
Richard Geiger, Thomas Zabel, and Hans Sigg
Frontiers in Materials 2, July 2015

Intersubband transition in Si/SiGe heterojunctions, quantum dots, and QWs
Hans Sigg
Nanoscience and Technology Series on “Intersubband transitions in Quantum Structures” edited by R. Paiella p. 347 (2006)


Semiconductor Component Comprising Micro-Bridges for Adjusting a Tensile Strain State and Method for the Production Thereof
US 9293531