Silicon Carbide Based Electronics
Silicon carbide (SiC) is a wide-bandgap semiconductor considered to be one of the major enabling materials for advanced high power and high temperature electronics applications. In addition to its wide bandgap, SiC also has a high critical electric field strength and a high saturation drift velocity, can be doped both n- and p-type with relative ease, has SiO2 as native oxide. Up to six inch wafers with thickness and doping variations below 10%, are now commercially available.
With recent improvements in crystal growth and material processing, SiC-based electronics is now superior for power conversion than state-of-the-art silicon-based electronics, especially for high-temperature, high-voltage and high-frequency applications. Furthermore, thanks to its mature growth and fabrication technology when compared to diamond, SiC finds also applications in radiation hard detectors and in sensing using color centers.