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High quality 90 nm and 50 nm Li4Ti5O12 films integrated on silicon substrates

Integration of Li4Ti5O12 crystalline films on silicon towards high-rate performance lithionic devices

The growth of crystalline Li-based oxide thin films on silicon substrates is essential for the integration of next-generation solid-state lithionic and electronic devices. In this work, we employ a 2 nm γ-Al2O3 buffer layer on Si substrates in order to grow high quality crystalline thin films Li4Ti5O12 (LTO). Long-term galvanostatic cycling of 50 nm LTO demonstrates exceptional electrochemical performance, specific capacity of 175 mAh g-1 and 56 mAh g-1 at 100C and 5000C respectively, with a capacity retention of 91% after 5000 cycles.

 

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