Francesco Taro Armand Pilon
5232 Villigen PSI
Francesco Armand Pilon is a PhD student working in the Quantum Technologies group at the Paul Scherrer Institut (PSI). After completing both his Bachelor's and Master's degree in Physics at the Università degli Studi di Milano (Italy), he joined STMicroelectronics as a Device Engineer. Since Oct. 2016 he has been pursuing his PhD in collaboration with Prof. Jérôme Faist from ETH Zürich.
Francesco Armand Pilon's research aims for the development of a hihgly strained Germanium laser fully integrable on Silicon chip. He investigates the novel optical properties of strained Gemanium, its lasing features, as well alternative all-group-IV lasing platforms, like the alloy GeSn, via spectroscopic techniques.
 GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q.-M. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J.-M.Hartmann, V.Calvo
ACS Photonics (2019)
 Lasing in strained germanium microbridges
F.T. Armand Pilon, A.Lyasota, Y.-M. Niquet, V. Reboud, V. Calvo, N. Pauc, J. Widiez, C. Bonzon, J.M. Hartmann, A.Chelnokov, J. Faist & H.Sigg.
Nature Communications 10, 2724 (2019)
 GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers
D. Stange, N. Von den Driesch, T. Zabel, F. Armand Pilon, D. Ranko, B. Marzban, P. Zaumseil, J.M. Hartmann, Z. Ikonic, G. Cappellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, D. Buca
ACS Photonics 2018 5,11, 4628-4636
 Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μ m up to 180 K.
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q.M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J.M. Hartmann, V. Calvo.
Appl. Phys. Lett. 111, 092101 (2017)