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Dieser Inhalt ist nicht auf Deutsch verfügbar.LMN News
New group member
Cornelius Hempel officially joins LMN as group leader "Ion Traps". We wish him every success for the future!
New group members
Marie-Christine Zdora, Umut Sanli and Talgat Mamyrbayev officially join the X-ray Optics and Applications group as Post-Docs. We wish them every success!
New group member
Robert Kälin officially joins the Quantum Technologies group as technician of the Cristallina endstation.
New group member
Alexander Steppke officially joins the Quantum Technologies group as project coordinator for the collaboration of the Cristallina-Q team and the Laboratory of Quantum Matter (LQM) of Prof. Johan Chang at the University of Zurich (UZH).
New group member
Iuliia Bykova officially joins the group X-ray Optics and Applications as Post-Doc. We wish her every success.
Installation of the new Pattern generator for Raith/Vistec EBPG5000Plus e-beam writer
Supported by SNF R'Equip, a new 20bit low-noise pattern generator for our 100 keV direct write electron beam lithography system Raith/Vistec EBPG5000Plus has been successfully installed. This allows for faster exposures (up to 125MHz stepping frequency) with better placement accuracy within the writing field up to 1x1 mm². The so called Universal Pattern Generator (UPG) supports now a broad spectrum of primitiv shapes, which can dramatically improve the quality of exposed nanostructures by optimized fracturing of designs.
Installation of Heidelberg DWL66+
Heidelberg DWL66+ direct laser writer, funded by ANAXAM, is in operation now. It is a new photolithographic system closing the gap between the mask aligners on one side and the Nanoscribe two-photon 3D lithography system on the other. It is equipped with semiconductor laser with the wave length of 405 nm and is capable of exposing the minimum feature size down to 0.3 µm on wafers up to 200 mm or 9"x9" mask blanks.
Installation of SPTS Rapier Deep Reactive Ion Etcher
SPTS Rapier system for Si deep reactive ion etching (DRIE) is released for user operation. The system is acquired by PSI as a part of SNF R’Equip project “Advanced Si DRIE tool for highly uniform ultra-deep structuring (SiDRY)”. This versatile tool is equipped with pulsed bias option and sensitive ClaritasTM optical end point detection system. Electrostatic clamping and wafer edge protection systems are both available for three wafer diameters – 100 mm, 150 mm, and 200 mm.